Fairchild Semiconductor NDP7051L, NDB7051L Datasheet
NDP7051L / NDB7051L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
September 1996
These logic level N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
67 A, 50 V. R
R
= 0.0145 Ω @ VGS= 5 V
DS(ON)
= 0.0115 Ω @ VGS= 10 V.
DS(ON)
Low drive requirements allowing operation directly from logic
drivers. V
GS(TH)
< 2.0V.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter NDP7051L NDB7051L Units
V
DSS
V
DGR
V
GSS
Drain-Source Voltage 50 V
Drain-Gate Voltage (RGS < 1 MΩ)
50 V
Gate-Source Voltage - Continuous ±16 V
- Nonrepetitive (tP < 50 µs) ±25
I
D
Drain Current - Continuous 67 A
- Pulsed 200
P
D
Maximum Power Dissipation @ TC = 25°C
130 W
Derate above 25°C 0.87 W/°C
TJ,T
Operating and Storage Temperature Range -65 to 175 °C
STG
© 1997 Fairchild Semiconductor Corporation
NDP7051L Rev.D/NDB7051L Rev.E
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W
I
AR
Single Pulse Drain-Source Avalanche
DSS
Energy
VDD = 25 V, ID = 67 A 430 mJ
Maximum Drain-Source Avalanche Current 67 A
OFF CHARACTERISTICS
BV
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 50 V
DSS
Zero Gate Voltage Drain Current
VDS = 40 V, V
GS
= 0 V
10 µA
TJ = 125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 16 V, VDS = 0 V
VGS = -16 V, VDS = 0 V
1 mA
100 nA
100 nA
ON CHARACTERISTICS (Note 1)
V
R
GS(th)
DS(ON)
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.24 2 V
0.65 0.84 1.5
0.013 0.0145
0.018 0.026
Static Drain-Source On-Resistance
TJ = 125°C
VGS = 5 V, ID = 34 A
TJ = 125°C
Ω
VGS = 10 V, ID = 34 A 0.01 0.0115
I
D(on)
g
FS
On-State Drain Current
VGS = 5 V, VDS = 10 V
Forward Transconductance VDS = 5 V, ID = 34 A 50 S
60 A
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 850 pF
Reverse Transfer Capacitance 300 pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
2700 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 25 V, ID = 34 A,
Turn - On Rise Time 182 300 nS
Turn - Off Delay Time 82 150 nS
VGS = 5 V, R
R
= 10 Ω
GS
GEN
= 10 Ω
17 30 nS
Turn - Off Fall Time 157 250 nS
Total Gate Charge
Gate-Source Charge 9 nC
VDS= 12 V
ID = 67 A , VGS = 5 V
56 80 nC
Gate-Drain Charge 32 nC
NDP7051L Rev.D/NDB7051L Rev.E
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
ISM
V
t
I
S
SD
rr
rr
Maximum Continuos Drain-Source Diode Forward Current 67 A
Maximum Pulsed Drain-Source Diode Forward Current 200 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 34 A (Note 1) 0.92 1.3 V
TJ = 125°C
Reverse Recovery Time VGS = 0 V, IF = 67 A,
Reverse Recovery Current 2 3.6 10 A
dIF/dt = 100 A/µs
0.83 1.2 V
40 75 150 ns
THERMAL CHARACTERISTICS
R
θ
R
θ
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Thermal Resistance, Junction-to-Case 1.15 °C/W
JC
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
JA
NDP7051L Rev.D/NDB7051L Rev.E
Typical Electrical Characteristics
100
V =10V
80
5.0
GS
4.5
4.0
3.5
60
40
20
D
I , DRAIN-SOURCE CURRENT (A)
0
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
3.0
2.5
Figure 1. On-Region Characteristics.
2
I = 34A
D
1.8
V = 5.0V
GS
1.6
1.4
1.2
1
DS(ON)
R , NORMALIZED
0.8
0.6
DRAIN-SOURCE ON-RESISTANCE
0.4
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
2
1.8
V =3V
1.6
GS
1.4
1.2
DS(on)
1
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
0 20 40 60 80 100
3.5
4.0
4.5
I , DRAIN CURRENT (A)
D
5.0
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
2
V = 5.0V
GS
1.5
1
DS(on)
0.5
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0
0 20 40 60 80 100
T = 125°C
J
25°C
-55°C
I , DRAIN CURRENT (A)
D
6.0
10
Figure 3. On-Resistance Variation
with Temperature.
60
50
40
30
20
D
I , DRAIN CURRENT (A)
10
0
1 1.5 2 2.5 3 3.5 4
V = 5V
DS
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
125°C
Figure 5. Transfer Characteristics.
25°C
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
1.3
1.2
1.1
1
0.9
0.8
0.7
th
V , NORMALIZED
0.6
0.5
GATE-SOURCE THRESHOLD VOLTAGE
0.4
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
V = V
I = 250µA
D
Figure 6. Gate Threshold Variation
with Temperature.
NDP7051L Rev.D/NDB7051L Rev.E
DS
GS
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