Fairchild Semiconductor NDB6051 Datasheet
NDP6051 / NDB6051
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
May 1996
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters, PWM
motor controls, and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
48 A, 50 V. R
= 0.022 Ω @ VGS= 10 V.
DS(ON)
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
______________________________________________________________________________
D
G
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter NDP6051 NDB6051 Units
V
DSS
V
DGR
V
GSS
Drain-Source Voltage 50 V
Drain-Gate Voltage (RGS < 1 MΩ)
50 V
Gate-Source Voltage - Continuous ± 20 V
- Nonrepetitive (tP < 50 µs) ± 40
I
D
Drain Current - Continuous 48 A
- Pulsed 144
P
D
Total Power Dissipation @ TC = 25°C
100 W
Derate above 25°C 0.67 W/°C
TJ,T
T
L
Operating and Storage Temperature Range -65 to 175 °C
STG
Maximum lead temperature for soldering purposes,
275 °C
1/8" from case for 5 seconds
© 1997 Fairchild Semiconductor Corporation
NDP6051 Rev. C1
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W
DSS
I
AR
Single Pulse Drain-Source Avalanche
VDD = 25 V, ID = 48 A 300 mJ
Energy
Maximum Drain-Source Avalanche Current 48 A
OFF CHARACTERISTICS
BV
I
DSS
I
GSSF
I
GSSR
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = 50 V, V
GS
= 0 V
TJ = 125°C
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
50 V
250 µA
1 mA
-100 nA
ON CHARACTERISTICS (Note 1)
V
R
I
g
GS(th)
DS(ON)
D(on)
FS
Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 2.8 4 V
TJ = 125°C
1.4 2.2 3.6
Static Drain-Source On-Resistance VGS = 10 V, ID = 24 A 0.018 0.022
TJ = 125°C
0.03 0.04
On-State Drain Current VGS = 10 V, VDS = 10 V 60 A
Forward Transconductance
VDS = 10 V, ID = 24 A
14 S
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance 520 pF
f = 1.0 MHz
Reverse Transfer Capacitance 190 pF
1220 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 30 V, ID = 48 A,
Turn - On Rise Time 132 250 nS
VGS = 10 V, R
GEN
= 7.5 Ω
10 20 nS
Turn - Off Delay Time 28 55 nS
Turn - Off Fall Time 80 150 nS
Total Gate Charge VDS = 24 V,
Gate-Source Charge 8
ID = 48 A, VGS = 10V
37 53 nC
Gate-Drain Charge 22
NDP6051 Rev. C1
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