Fairchild Semiconductor NDP4060, NDB4060 Datasheet
July 1996
NDP4060 / NDB4060
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
___________________________________________________________________________________________
15A, 60V. R
= 0.10Ω @ VGS=10V.
DS(ON)
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
D
G
S
Absolute Maximum Ratings T
= 25°C unles otherwise noted
C
Symbol Parameter NDP4060 NDB4060 Units
V
DSS
V
DGR
V
GSS
I
D
Drain-Source Voltage 60 V
Drain-Gate Voltage (RGS < 1 MΩ)
60 V
Gate-Source Voltage - Continuous ± 20 V
- Nonrepetitive (tP < 50 µs)
± 40
Drain Current - Continuous ± 15 A
- Pulsed ± 45
P
D
Total Power Dissipation 50 W
Derate above 25°C 0.33 W/°C
TJ,T
T
L
Operating and Storage Temperature Range -65 to 175 °C
STG
Maximum lead temperature for soldering purposes,
275 °C
1/8" from case for 5 seconds
© 1997 Fairchild Semiconductor Corporation
NDP4060 Rev. C
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W
DSS
I
AR
Single Pulse Drain-Source Avalanche
VDD = 25 V, ID = 15 A 40 mJ
Energy
Maximum Drain-Source Avalanche Current 15 A
OFF CHARACTERISTICS
BV
I
DSS
DSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
Zero Gate Voltage Drain Current VDS = 60 V, V
= 0 V 250 µA
GS
60 V
TJ = 125°C 1 mA
I
GSSF
I
GSSR
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA
100 nA
ON CHARACTERISTICS (Note 1)
V
R
GS(th)
DS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
TJ = 125°C
Static Drain-Source On-Resistance VGS = 10 V, ID = 7.5 A 0.078 0.1
2 3 4 V
1.4 2.4 3.6
Ω
TJ = 125°C 0.12 0.165
I
g
D(on)
FS
On-State Drain Current
VGS = 10 V, VDS = 10 V
Forward Transconductance VDS = 10 V, ID = 7.5 A 3 5.7 S
15 A
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 165 200 pF
VDS = 25, VGS = 0 V,
f = 1.0 MHz
Reverse Transfer Capacitance 50 100 pF
370 450 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 30 V, ID = 15 A
Turn - On Rise Time 70 100 ns
VGS = 10 V, R
GEN
= 25 Ω
8 20 ns
Turn - Off Delay Time 18 30 ns
Turn - Off Fall Time 37 50 ns
Total Gate Charge VDS = 48 V
Gate-Source Charge 3.2 nC
ID = 15 A, VGS = 10 V
12.7 17 nC
Gate-Drain Charge 7 nC
NDP4060 Rev. C
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