Fairchild Semiconductor MPSW56 Datasheet
MPSW56
MPSW56
C
B
E
TO-226
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 800 mA.
Sourced from Process 79.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter V ol tage 80 V
Collector-Base Voltage 80 V
Emitter-Base Volt age 4.0 V
Collector Current - Continuous 1.0 A
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSW56
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2000 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
1.0
8.0
Thermal Resistance, Junction to Case 50
Thermal Resistance, Junc tion to Ambient 125
2
.
W
mW/°C
°
C/W
°
C/W
MPSW56, Rev A
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
BE(on)
Co llec to r-E m itter B re ak d o w n
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage IE = 1 .0 mA , IC = 0 4.0 V
Collector-Cutoff Current VCB = 6 0 V , IE = 0 0.1
Collector-Cutoff Current VCE = 6 0 V 0.5
Em itter-C u to ff C u rre nt VEB = 3.0 V, IC = 0 0.1 0
DC Current Gain IC = 50 mA, VCE = 1.0 V
Collector-Emitter S aturation Voltage IC = 250 mA, IB = 10 mA 0.5 V
)
IC = 1.0 mA, IB = 0 80 V
= 100 µA, IE = 0
I
C
80 V
100
= 250 mA, VCE = 1.0 V
I
C
50
Base-Emitter On Voltage IC = 250 mA, VCE = 5.0 V 1.2 V
µ
A
A
µ
A
µ
MPSW56
SMALL SIGNAL CHARACTERISTICS
f
T
C
ob
Current Gain-Bandwidth Product IC = 250 mA, VCE = 5.0 V,
Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 15 pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
200
125 °C
150
100
25 °C
50
- 40 °C
0
0.01 0.02 0.05 0.1 0.5 1
FE
h - TYPICAL PULSED CURRENT GAIN
I - COLLECTOR CURRENT (mA)
C
V = 1.0 V
CE
f = 20 MHz
50 MHz
Collector-Emitter Saturation
Voltage vs Collector Current
2
= 10
β
1
25 °C
0.1
0.01
10 100 1000
CESAT
V - COLLECTOR EMITTER VOLTAGE (V)
- 40 ºC
125 ºC
I - COLLECTOR CURRENT (mA)
C
Typical Characteristics (continued)
MPSW56
PNP General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
= 10
β
1
0.8
0.6
- 40 ºC
25 °C
125 ºC
0.4
BESAT
V - BASE EMITTER VOLTAGE (V)
1 10 100 1000
I - COLLECTOR CURRENT (mA)
C
Collector-Cutoff Current
vs. Ambient Temperature
100
V = 60V
CB
10
1
0.1
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
1 10 100 1000
BEON
V - BASE EMITTER ON VOLTAGE (V)
- 40 ºC
25 °C
125 ºC
V = 5V
CE
I - COLLECTOR CURRENT (mA)
C
Collector-Base Capacitance
vs Collector-Base Voltage
40
30
20
10
f = 1.0 MHz
CBO
0.01
I - COLLECTOR CURRENT (nA)
25 50 75 100 125
T - AMBIENT TEMPERATURE ( C)
A
º
Gain Bandwidth Product
vs Collector Current
250
V = 10V
CE
200
150
100
50
0
1 10 100 1000
T
f - GAIN BANDWIDTH PRODUCT (MHz)
I - COLLECTOR CURRENT (mA)
C
0
0 4 8 1216202428
O
B
O
C - COLLECTOR-BASE CAPACITANCE (pF)
V - COLLECTOR-BASE VOLTA GE (V)
CB
Pr79
Safe Operating Area TO-226
10
10
µ
1
*PULSED
0.1
OPERATION
T = 25 °C
A
C
I - COLLECTOR CURRENT (A)
0.01
110100
DC T = 25
COLLECTOR LEAD
DC T = 25
AMBIENT
LIMIT DETERMINED
BY BV
V - COLLECTOR-EMITTER VOLTAGE (V)
CE
100
°C
CEO
S*
µ
S*
1.0 m
s*
°C
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