Fairchild Semiconductor MPSW06 Datasheet
MPSW06
MPSW06
Discrete POWER & Signal
Technologies
C
B
E
TO-226
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 33. See
MPSA06 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 80 V
Collector-Base Voltage 80 V
Em i t ter - Bas e V olt ag e 4. 0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
MPSW06
P
D
R
θ
JC
R
θ
JA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 125 °
Thermal Resistance, Junction to Ambient 50
1.0
8.0
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
2
.
W
mW/°C
C/W
°C/W
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)EBO
I
CEO
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Sustaining Voltage* IC = 1.0 m A, IB = 0 80 V
Em i t ter - Bas e B r e akdown Vol tage IE = 100 µA, IC = 0 4.0 V
Collector-Cutoff Current VCE = 60 V, IB = 0 0.1
Collector-Cutoff Current VCB = 80 V, IE = 0 0.1
DC Cu r re n t Ga in IC = 10 mA, VCE = 1.0 V
= 100 mA, VCE = 1.0 V
I
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA 0.25 V
)
C
100
100
Base-Emitter On Voltage IC = 100 mA, VCE = 1.0 V 1.2 V
Current Gain - Bandwidth Product IC = 10 mA, VCE = 2.0 V,
100 MHz
f = 10 0 M Hz
µ
A
µ
A
MPSW06
Spice Model
NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0
Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5
Vtf=4 Xtf=6 Rb=10)
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