Fairchild Semiconductor MPSH81, MMBTH81 Datasheet
C
E
B
TO-92
PNP RF Transistor
This device is designed for general RF amplifier and mixer
applications to 250 mHz with collector currents in the 1.0 mA
to 30 mA range. Sourced from Process 75.
MMBTH81MPSH81
C
SOT-23
Mark: 3D
MPSH81 / MMBTH81
Discrete POWER & Signal
Technologies
E
B
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 20 V
Collector-Base Voltage 20 V
Emitter-Base Voltage 3.0 V
Collector Current - Continuous 50 mA
Operating and Storage Junction Temperature Range -55 to +150
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSH81 *MMBTH81
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Total Device Dissipa tion
Derate above 25°C
Ther mal Resistance, Junction to Case 125
Thermal Resistance, Junction to Ambient 357 556
350
2.8
225
1.8
mW
mW/°C
C/W
°
C/W
°
1997 Fairchild Semiconductor Corporation
H81, Rev B
(BR)
(BR)
(BR)
PNP RF Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CEO
V
CBO
V
EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
ce
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitte r Breakdown Voltage* IC = 1.0 mA, IB = 0 20 V
Collector-Base Breakdown Voltag e
Emitter-Base Breakdown Voltage
I
= 10 µA, IE = 0
C
I
= 10 µA, IC = 0
E
20 V
3.0 V
Collector Cutoff Current VCB = 10 V, IE = 0 100 nA
Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 nA
DC Current Gain IC = 5.0 mA, VCE = 10 V 60
Collector-Emitte r Saturation Voltage IC = 5.0 mA, IB = 0.5 mA 0.5 V
)
Base-Emitter On Voltage IC = 5.0 mA, VCE = 10 V 0.9 V
Current Gain - Bandwidth Product IC = 5.0 mA, VCE = 10 V,
600 MHz
f = 100 MHz
Collector-Base Capa citance VCB = 10 V, IE = 0, f = 1.0 MHz 0.85 pF
Collector Emitter Capcitance VCB = 10 V, IB = 0, f = 1.0 MHz 0.65 pF
MPSH81 / MMBTH81
DC Typical Characteristics
DC Current Gain vs.
Collector Current
Collector Saturation Voltage
vs. Collector Current
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