Fairchild Semiconductor MPSH24, MMBTH24 Datasheet
MPSH24 MMBTH24
C
B
E
NPN RF Transistor
This device is designed for common-emitter low noise
amplifier and mixer applications with collector currents
in the 100 µA to 20 mA range to 300 MHz, and low
frequency drift common-base VHF oscillator applications
with high output levels for driving FET mixers. Sourced
from Process 47. See MPSH11 for characteristics.
TO-92
C
SOT-23
Mark: 3A
MPSH24 / MMBTH24
Discrete POWER & Signal
Technologies
E
B
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 30 V
Collector-Base Voltage 40 V
Em i t ter - Bas e V olt ag e 4. 0 V
Collector Current - Continuous 50 mA
Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteri st ic Max Units
MPSH24 *MMBTH24
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200 556
625
5.0
225
1.8
mW
mW/°C
°C/W
1997 Fairchild Semiconductor Corporation
NPN RF Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
ON CHARACTERISTICS
h
FE
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Sustaining Voltage* IC = 1.0 m A, IB = 0 30 V
C oll ec t or -Base Breakd ow n Volt age IC = 100 µA, IE = 0 40 V
Em i t ter - Bas e B r e akdown Vol tage IE = 10 µA, IC = 0 4.0 V
Colle c tor Cu tof f Cu r ren t VCB = 15 V, IE = 0 50 nA
DC Cu r re n t Ga in IC = 8.0 m A, VCE = 10 V 30
Current Gain - Bandwidth Product IC = 8.0 m A, VCE = 10 V,
f = 10 0 M Hz
Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.36 pF
400 MHz
MPSH24 / MMBTH24
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