Fairchild Semiconductor MPSH11, MMBTH11 Datasheet

Discrete POWER & Signal

Technologies

MPSH11 / MMBTH11

MPSH11

C

B

E

TO-92

MMBTH11

C

SOT-23

Mark: 3G

B

E

NPN RF Transistor

This device is designed for common-emitter low noise amplifier
and mixer applications with collector currents in the 100 µA to
10 mA range to 300 MHz, and low frequency drift common-base
VHF oscillator applications with high output levels for driving
FET mixers. Sourced from Process 47.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Collector-Emitter Voltage 25 V
Collector-Base Voltage 30 V
Em i t ter - Bas e V olt ag e 3. 0 V
Collector Current - Continuous 50 mA
Operating and Storage Junction Temperature Range -55 to +150

°C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

MPSH11 *MMBTH11

P

D

R

θ

JC

R

θ

JA

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

Total De vice Dissip at i on

Derate above 25°C

Thermal Resistance, Junction to Case 125
Thermal Resistance, Junction to Ambient 357 556 °C/W

350

2.8

225

1.8

mW

mW/°C

°C/W

NPN RF Transistor

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

ON CHARACTERISTICS

h

FE

V

sat

CE(

V

BE(on)

SMALL SIGNAL CHARACTERISTICS

f

T

C

cb

C

rb

rb’C

c

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Collector-Emitter Sustaining Voltage* IC = 1.0 m A, IB = 0 25 V
C oll ec t or -Base Breakd ow n Volt age IC = 100 µA, IE = 0 30 V
Em i t ter - Bas e B r e akdown Vol tage

= 10 µA, IC = 0

I

E

3.0 V
Colle c tor Cu tof f Cu r ren t VCB = 25 V, IE = 0 100 nA
Emit ter Cutoff C u rre nt VEB = 2.0 V, I

= 0 100 nA

C

DC Cu r re n t Ga in IC = 4.0 m A, VCE = 10 V 60
Collector-Emitter Saturation Voltage IC = 4.0 m A, IB = 0.4 mA 0.5 V

)

Base-Emitter On Voltage IC = 4.0 m A, VCE = 10 V 0.95 V

Current Gain - Bandwidth Product IC = 4.0 m A, VCE = 10 V,

650 MHz

f = 10 0 M Hz

Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.7 pF
Common-Base Feedback Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.6 0.9 pF
Collector Base Time Constant IC = 4.0 m A, VCB = 10 V,

f = 31.8 MHz

9.0 pS

MPSH11 / MMBTH11

DC Typical Characteristics

DC Current Gain

vs Collec tor Current

300

V = 5V

CE

250
200

150
100

50

FE

0

h - DC PULSED CURRENT GAIN

0.01 0.1 1 10 100

125 º

C

25 °C

- 4 0 ºC

I - COLLECTOR CURRENT (mA)

C

C o llector-E mitter Saturati o n

Voltage vs Collector Current

0.2

ββ

= 10

0.15

0.1

V - COLLECTOR-EMITTER VOLTAGE (V)

0.05

CESAT

- 40 ºC

0.1 1 10 20 30

I - COLLE CT O R CURRENT (mA)

C

25 °C

125 º

C

DC Typical Characteristics (continued)

MPSH11 / MMBTH11

NPN RF Transistor

(continued)

Base-Emitter Saturation

Voltage vs Collector Current

1

- 40 ºC

0.8

0.6

0.4

0.2

BESAT

V - BASE-EMITTER VOLTAGE (V)

0.1 1 10 20 30

25 °C

125 º

C

ββ

= 10

I - COLLE CT O R CU RRE NT (mA)

C

C o llector-Cutoff Curre n t
vs Ambient Temperature

10

V = 30V

CB

1

0.1

Base-Emi tter ON V oltage vs

Collector Current

1

0.8

0.6

0.4

0.2

0.01 0.1 1 10 100

BE(ON)

V - BASE-EMITTER ON VOLTAGE (V)

- 40 ºC

25 °C

125 º

C

I - COLLE CT OR CURR ENT (mA)

C

V = 5V

CE

CBO

I - COLLE CT O R CURR EN T (nA)

25 50 75 100 125 150

AC Typical Characteristics

Capacitance vs.

Reverse Bias Voltage

T - AMBIE NT TEMPERATURE ( C)

A

º

Contours of Constant Gain

Bandwidth Product (fT)