Fairchild Semiconductor MPSH10, MMBTH10 Datasheet
Discrete POWER & Signal
Technologies
MPSH10 MMBTH10
C
MPSH10 / MMBTH10
C
E
B
TO-92
SOT-23
Mark: 3E
E
B
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers,
with collector currents in the 100 µA to 20 mA range in common
emitter or common base mode of operations, and in low frequency
drift, high output UHF oscillators. Sourced from Process 42.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 25 V
Collector-Base Voltage 30 V
Em i t ter - Bas e V olt ag e 3. 0 V
Collector Current - Continuous 50 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSH10 *MMBTH10
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 357 556
350
2.8
225
1.8
mW
mW/°C
°C/W
NPN RF Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
rb
rb’C
c
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Sustaining Voltage* IC = 1.0 m A, IB = 0 25 V
C oll ec t or -Base Breakd ow n Volt age IC = 100 µA, IE = 0 30 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
3.0 V
Colle c tor Cu tof f Cu r ren t VCB = 25 V, IE = 0 100 nA
Emit ter Cutoff C u rre nt VEB = 2.0 V, I
= 0 100 nA
C
DC Cu r re n t Ga in IC = 4.0 m A, VCE = 10 V 60
Collector-Emitter Saturation Voltage IC = 4.0 m A, IB = 0.4 mA 0.5 V
)
Base-Emitter On Voltage IC = 4.0 m A, VCE = 10 V 0.95 V
Current Gain - Bandwidth Product IC = 4.0 m A, VCE = 10 V,
650 MHz
f = 10 0 M Hz
Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.7 pF
Common-Base Feedback Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.35 0.65 pF
Collector Base Time Constant IC = 4.0 m A, VCB = 10 V,
f = 31.8 MHz
9.0 pS
MPSH10 / MMBTH10
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n
Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10)
Loading...