Fairchild Semiconductor MPSA65 Datasheet
Discrete POWER & Signal
Technologies
MPSA65 / MMBTA65 / PZTA65
MPSA65
C
B
E
TO-92
MMBTA65
C
SOT-23
Mark: 2W
B
E
PZTA65
C
C
B
SOT-223
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
See MPSA64 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 30 V
Collector-Base Voltage 30 V
Emitter-Base Volta g e 10 V
Collector Current - Continuous 1.2 A
Operating and Storage Junction Temperature Range -55 to +150
C
°
E
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSA65 *MMBTA65 **PZTA65
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 357 125
625
5.0
350
2.8
2
1,000
8.0
.
mW
mW/°C
°C/W
°C/W
A65, Rev A
PNP Darlington Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CES
I
CBO
I
EBO
Collector-Em itter Breakdown
Voltage
Collector-Cutoff Current VCB = 30 V, IE = 0 100 nA
Em itte r-C uto ff C u rren t VEB = 8.0 V, IC = 0 100 nA
ON CHARACTERISTICS*
h
V
V
FE
CE(
BE(on)
sat
DC Current Gain IC = 10 mA, VCE = 5.0 V
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V
)
Base-Emitter On Voltage IC = 100 mA, VCE = 5.0 V 2.0 V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V,
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
= 100 µA, IB = 0
I
C
= 100 mA, VCE = 5.0 V
I
C
f = 100 MHz
30 V
50,000
20,000
100 MHz
MPSA65 / MMBTA65 / PZTA65
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