Fairchild Semiconductor MPSA63, MMBTA63 Datasheet
Discrete POWER & Signal
Technologies
MPSA63 / MMBTA63 / PZTA63
MPSA63
C
B
E
TO-92
MMBTA63
C
SOT-23
Mark: 2U
B
E
PZTA63
C
C
B
SOT-223
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
See MPSA64 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 30 V
Collector-Base Voltage 30 V
Emitter-Base Volta g e 10 V
Collector Current - Continuous 1.2 A
Operating and Storage Junction Temperature Range -55 to +150
C
°
E
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSA63 *MMBTA63 **PZTA63
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 357 125
625
5.0
350
2.8
2
1,000
8.0
.
mW
mW/°C
°C/W
°C/W
A63, Rev A
(BR)
PNP Darlington Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CES
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Breakdown Voltage
I
= 100 µA, IB = 0
C
30 V
Collector-Cutoff Current VCB = 30 V, IE = 0 100 nA
Emitter-Cutoff Current VEB = 10 V, IC = 0 100 nA
DC Current Gain IC = 10 mA, VCE = 5.0 V
= 100 mA, VCE = 5.0 V
I
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V
)
C
5,000
10,000
Base-Emitter On Voltage IC = 100 mA, VCE = 5.0 V 2.0 V
Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V,
125 MHz
f = 100 MHz
MPSA63 / MMBTA63 / PZTA63
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