Fairchild Semiconductor MM74HCT245WMX, MM74HCT245N, MM74HCT245SJ, MM74HCT245MTC, MM74HCT245WM Datasheet

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February 1984 Revised February 1999
MM74HCT245 Octal 3-STATE Transceiver
© 1999 Fairchild Semiconductor Corporation DS005366.prf www.fairchildsemi.com
MM74HCT245 Octal 3-STATE Transceiver
General Description
The MM74HCT245 3-STATE bi-directional buffer utilizes advanced silicon-gate CMOS technology and is intended for two-way asynchronous communication between data buses. It has high drive current out puts which ena ble high speed operation even when driving large bus capaci­tances. This circuit possesses the low power consumpt ion of CMOS circuitry, yet has speeds comparable to low power Schottky TTL circuits.
This device is TTL inp ut compatible and can drive up to 15 LS-TTL loads, and al l inputs are protected fr om damage due to static discharge by diodes to V
CC
and ground.
The MM74HCT245 ha s one active low enable input (G
),
and a direction contr ol ( DIR ) . Whe n the DIR input is HIGH,
data flows from the A in puts to th e B outputs. When DI R is LOW, data flows from B to A.
MM74HCT devices are intended to interface between TTL and NMOS components and standard CMOS devices. These parts are also plug-in replacements for LS-TTL devices and can be used to redu ce power consumption in existing designs.
Features
TTL input compatible
3-STATE outputs for connection to system busses
High output drive current: 6 mA (min)
High speed: 16 ns typical propagation delay
Low power: 80 µA (74H CT Se ries)
Ordering Code:
Devices also available in Tape and Reel. Specify by appending the suffix letter “X” to t he ordering code.
Connection Diagram
Pin Assignments for DIP, SOIC, SOP and TSSOP
Top View
Truth Table
H = HIGH Level L = LOW Level X = Irrelevant
Order Number Package Number Package Description
MM74HCT245WM M20B 20-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-013, 0.300” Wide MM74HCT245SJ M20D 20-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide MM74HCT245M TC MTC20 20-Lead T hin Sh ri nk S m al l Out li n e Package (T S SO P), JE DE C MO -1 5 3, 4 . 4m m Wi d e MM74HCT245N N20A 20-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300” Wide
Control Operation
Inputs
G
DIR 245
L L B data to A bus L H A data to B bus
H X isolation
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MM74HCT245
Logic Diagram
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MM74HCT245
Absolute Maximum Ratings(Note 1)
(Note 2)
Recommended Operating Conditions
Note 1: Absolute Maximum Rati ngs are tho se values b eyond which d am-
age to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to ground. Note 3: Power Dissipation temperature de rating — p lastic “N” p ackage:
12 mW/°C from 65°C to 85°C.
DC Electrical Characteristics
(V
CC
= 5V ± 10%, unless otherwise specified.)
Note 4: Measured pe r input. All other inputs at VCC or ground.
Supply Voltage (VCC) 0.5 to +7.0V DC Input Voltage (V
IN
) 1.5 to V
CC
+1.5V
DC Output Voltage (V
OUT
) 0.5 to V
CC
+0.5V
Clamp Diode Current (I
IK
, IOK) ±20 mA DC Output Current, ±35 mA DC V
CC
or GND Current, per pin (ICC) ±70 mA
Storage Temperature Range (T
STG
) 65°C to +150°C
Power Dissipation (P
D
) (Note 3) 600 mW S.O. Package only 500 mW
Lead Temperature (T
L
) (Soldering 10 seconds) 260°C
Min Max Units
Supply Voltage (V
CC
)4.55.5V
DC Input or Output Voltage
(V
IN
, V
OUT
)0V
CC
V
Operating Temperature Range (T
A
) 40 +85 °C
Input Rise or Fall Times
(t
r
, tf) 500 ns
Symbol Parameter Conditions
TA = 25°CTA = −40 to 85°CTA = −55 to 125°C
Units
Typ Guaranteed Limits
V
IH
Minimum HIGH Level 2.0 2.0 2.0 V Input Voltage
V
IL
Maximum LOW Level 0.8 0.8 0.8 V Input Voltage
V
OH
Minimum HIGH Level V
IN
= VIH or V
IL
Output Voltage |I
OUT
| = 20 µAV
CCVCC
0.1 VCC− 0.1 VCC− 0.1 V
|I
OUT
| = 6.0 mA, V
CC
= 4.5V 4.2 3.98 3.84 3.7 V
|I
OUT
| = 7.2 mA, V
CC
= 5.5V 5.2 4.98 4.84 4.7 V
V
OL
Maximum LOW Level V
IN
= VIH or V
IL
Voltage |I
OUT
| = 20 µA00.10.10.1V
|I
OUT
| = 6.0 mA, V
CC
= 4.5V 0.2 0.26 0.33 0.4 V
|I
OUT
| = 7.2 mA, V
CC
= 5.5V 0.2 0.26 0.33 0.4 V
I
IN
Maximum Input V
IN
= VCC or GND, ±0.1 ±1.0 ±1.0 µA
Current VIH or VIL, Pin 1 or 19
I
OZ
Maximum 3- STATE V
OUT
= VCC or GND ±0.5 ±5.0 ±10 µA
Output Leakage
G = V
IH
Current
I
CC
Maximum Quiescent V
IN
= VCC or GND 8 80 160 µA
Supply Current I
OUT
= 0 µA
V
IN
= 2.4V or 0.5V (Note 4) 0.6 1.0 1.3 1.5 mA
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