Fairchild Semiconductor MJE803, MJE801, MJE800 Datasheet
MJE800/801/802/803
Monolithic Construction With Built-in BaseEmitter Resistors
• High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC
• Complement to MJE700/701/702/703
MJE800/801/802/803
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
Collector- Base Voltage : MJE800/801
: MJE802/803
V
CEO
Collector-Emitter Voltage : MJE800/801
: MJE802/803
VEBO
IC
IB
PC
TJ
T
STG
Emitter-Base Voltage 5 V
Collector Current 4 A
Base Current 0.1 A
Collector Dissipation (TC=25°C) 40 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
I
CEO
I
CBO
I
EBO
hFE
(sat) Collector-Emitter Saturation Voltage
VCE
(on) Base-Emitter ON Voltage
V
BE
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain : MJE800/802
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 50mA, IB = 0
I
: MJE800/801
: MJE802/803
C
: MJE800/801
: MJE802/803
: MJE801/803
: ALL DEVICES
: MJE800/802
: MJE801/803
: ALL DEVICES
: MJE800/802
: MJE801/803
: ALL DEVICES
= 60V, IB = 0
V
CE
= 80V, IB = 0
V
CE
= Rated BV
CB
V
= Rated BV
CB
= 100°C
T
C
= 5V, IC = 0 2 mA
BE
V
= 3V, IC = 1.5A
CE
V
= 3V, IC = 2A
CE
= 3V, IC = 4A
V
CE
= 1.5A, IB = 30mA
I
C
I
= 2A, IB = 40mA
C
= 4A, IB = 40mA
I
C
= 3V, IC = 1.5A
V
CE
V
= 3V, IC = 2A
CE
= 3V, IC = 4A
V
CE
60
80
60
80
CEO
CEO
, IE = 0
, IE = 0
Equivalent Circuit
V
V
V
B
V
R
110
R
20.6
R1
R2
k
Ω≅
k
Ω≅
60
80
100
100
100
500
750
750
100
2.5
2.8
3
2.5
2.5
3
C
E
V
V
µA
µA
µA
µA
V
V
V
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
Typical Characteristics
MJE800/801/802/803
IB= 450µA
A
µ
= 500
I
B
A
µ
= 300
I
B
A
µ
= 250
I
B
A
µ
= 200
I
B
IB= 150µA
IB= 100µA
IB= 50µA
5
4
3
2
1
(A),COLLECTOR CURRE NT
C
I
0
IB= 400µA
IB= 350µA
012345
VCE(V),COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
100
10
1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
IC = 500 I
VBE(sat)
VCE(sat)
10000
VCE = 3V
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
1000
B
f=0.1MHZ
IE=0
100
10
[pF], CAPACITANCE
ob
C
1
0.01 0.1 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
10
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100 1000
MJE800/801
MJE802/803
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
D.C.
5ms
Figure 4. Collector Output Capacitance
100
µ
s
1ms
60
50
40
30
20
[W], POWER DISSIPATION
C
10
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A1, February 2001
Loading...