Fairchild Semiconductor MJE350 Datasheet
MJE350
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to MJE340
MJE350
1
1. Emitter 2.Collector 3.Base
TO-126
..PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
PC
TJ
T
STG
Collector-Base Voltage - 300 V
Collector-Emitter Voltage - 300 V
Emitter-Base Voltage - 5 V
Collector Current - 500 mA
Collector Dissipation (TC=25°C) 20 W
Junction T emperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
I
CBO
IEBO
hFE
CEO
Collector-Emitter Breakdown Voltage IC = - 1mA, IB = 0 -300 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 300V, IE = 0 -100 µA
CB
= - 3V, IC = 0 -100 µA
BE
= - 10V, IC = - 50mA 30 240
CE
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
Typical Characteristics
MJE350
1000
100
10
, DC CURRENT GAIN
FE
h
1
-1 -10 -100 -1000
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
-10000
-1000
-100
[A], COLLECTOR CURRENT
C
I
-10
-10 -100 -1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
500
µ
µ
1ms
s
s
DC
VCE = 10V
VBE(sat)
VCE(sat)
IC = 10I
B
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-1 -10 -100 -1000
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
25
20
15
10
5
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
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