Fairchild Semiconductor MJE340 Datasheet

MJE340
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to MJE350
MJE340
1
1. Emitter 2.Collector 3.Base
TO-126
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO VEBO IC PC TJ
T
STG
Collector-Base Voltage 300 V Collector-Emitter Voltage 300 V Emitter-Base Voltage 5 V Collector Current 500 mA Collector Dissipation (TC=25°C) 20 W Junction Temperature 150 °C Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV I
CBO
I
EBO
h
CEO
FE
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 300 V Collector Cut-off Current V Emitter Cut-off Current V DC Current Gain V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 300V, IE =0 100 µA
CB
= 3V, IC = 0 100 µA
BE
= 10V, IC = 50mA 30 240
CE
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
Typical Characteristics
MJE340
1000
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01 1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
DC
VCE = 2V
500
1ms
IC = 10I
1.2
1.0
0.8
0.6
0.4
(sat)[V], SATURATION VOLTAGE
CE
0.2
(sat), V
BE
V
0.0 10 100 1000
VBE(sat)
VCE(sat)
B
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
32
28
10
µ
s
µ
s
24
20
16
12
8
[W], POWER DISSIPATION
C
P
4
0
0 25 50 75 100 125 150 175
Tc[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
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