Fairchild Semiconductor MJE3055T Datasheet
MJE3055T
General Purpose and Switching Applications
• DC Current Gain Specified to IC =10A
• High Current Gain-Bandwidth Product : f
= 2MHz (Min.)
T
MJE3055T
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
IB
P
PC
T
T
CBO
CEO
EBO
C
C
J
STG
Collector -Base Voltage 70 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 5 V
Collector Current 10 A
Base Current 6 A
Collector Dissipation (TC=25°C) 75 W
Collector Dissipation (Ta=25°C) 0.6 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
I
CEO
I
CEX1
I
CEX2
I
EBO
h
FE
V
(sat) *Collector-Emitter Saturation Voltage IC = 4A, IB = 0.4A
CE
(on) *Base-Emitter On Voltage V
V
BE
f
T
* Pulse test: PW≤300µs, duty cycle≤2% Pulse
Collector-Emitter Breakdown Voltage IC = 200mA, IB = 0 60 V
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Current V
*DC Current Gain
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 30V, IB = 0 700 µA
CE
= 70V, VBE(off) = -1.5V
CE
= 70V, VBE(off) = -1.5V
V
CE
@ T
= 150°C
C
= 5V, IC = 0 5 mA
EB
V
= 4V, IC = 4A
CE
= 4V, IC = 10A
V
CE
= 10A, IB = 3.3A
I
C
= 4V, IC = 4A 1.8 V
CE
= 10V, IC = 500mA 2 MHz
CE
1
5
20 5100
1.1
8
mA
mA
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
Typical Characteristics
MJE3055T
1000
VCE = 2V
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
100
10
1
[A], COLLECTOR CURRENT
C
I
0.1
110100
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
1ms
5ms
DC
µ
s
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.1 1 10 100
VBE(sat)
VCE(sat)
IC = 10I
B
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
105
90
75
60
45
30
[W], POWER DISSIPATION
C
P
15
0
0 255075100125150175
Tc[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
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