Fairchild Semiconductor KSC5603D Datasheet

KSC5603D

KSC5603D

High Voltage High Speed Power Switch
Application

• Wide Safe Operating Area

• Built-in Free Wheeling Diode

• Suitable for Electronic Ballast Application

• Small Variance in Storage Time

Equivalent Circuit

B

C

1

1.Base 2.Collector 3.Emitter

E

NPN Silicon Transistor Planar Silicon Transistor

Absolute Maximum Ratings

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

I

BP

P

C

T

J

T

STG

* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%

Collector-Base Voltage 1600 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 12 V
Collector Current (DC) 3 A
*Collector Current (Pulse) 6 A
Base Current (DC) 2 A
*Base Current (Pulse) 4 A
Power Dissipation(TC=25°C) 100 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C

TC=25°C unless otherwise noted

TO-220

Thermal Characteristics

Symbol Characteristics Rating Unit

R

θjc

R

θja

T

L

©2003 Fairchild Semiconductor Corporation Rev. C1, June 2003

Thermal Resistance Junction to Case 1.25 °C/W

Maximun Lead Temperature for Soldering Purpose
: 1/8” from Case for 5 seconds

TC=25°C unless otherwise noted

Junction to Ambient 62.5

270 °C

KSC5603D

Electrical Characteristics T

=25°C unless otherwise noted

C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

BV

CEO

BV

EBO

I

CES

I

CEO

I

EBO

h

FE

(sat) Collector-Emitter Saturation Voltage IC=250mA,

V

CE

(sat) Base-Emitter Saturation Voltage IC=500mA,

V

BE

C

ib

C

ob

f

T

V

F

Collector-Base Breakdown Voltage IC=0.5mA, IE=0 1600 1689 V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0 800 870 V
Emitter-Base Breakdown Voltage IE=0.5mA, IC=0 12 14.8 V
Collector Cut-off Current V

I

E

CES

=0

=1600V,

Collector Cut-off Current VCE=800V,

=0

V

BE

T

=25°C 0.01 100 µA

C

=125°C 1000

T

C

T

=25°C 0.01 100 µA

C

=125°C 1000

T

C

Emitter Cut-off Current VEB=12V, IC=0 0.05 500 µA
DC Current Gain VCE=3V,

=0.4A

I

C

=10V,

V

CE

=5mA

I

C

=25mA

I

B

I

=500mA,

C

=50mA

I

B

=1A, IB=0.2mA TC=25°C1.22.5V

I

C

=50mA

I

B

=2A, IB=0.4A TC=25°C0.851.2V

I

C

T

=25°C202935

C

=125°C6 15

T

C

T

=25°C2043

C

=125°C20 46

T

C

T

=25°C 0.5 1.25 V

C

=125°C

T

C

T

=25°C1.52.5V

C

=125°C

T

C

T

=125°C

C

T

=25°C0.741.2V

C

=125°C0.611.1

T

C

=125°C0.741.1

T

C

Input Capacitance VEB=10V, IC=0, f=1MHz 745 1000 pF
Output Capacitance VCB=10V, IE=0, f=1MHz 56 500 pF
Current Gain Bandwidth Product IC=0.1A,VCE=10V 5 MHz
Diode Forward Voltage IF=0.4A TC=25°C0.761.2V

=125°CV

T

=1A TC=25°C0.831.5V

I

F

C

=125°CV

T

C

©2003 Fairchild Semiconductor Corporation Rev. C1, June 2003