Fairchild Semiconductor KSC5504DT, KSC5504D Datasheet
KSC5504D/KSC5504DT
High Voltage High Speed Power Switch
Application
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : D2-PAK or TO-220
NPN Triple Diffused Planar Silicon Transistor
Equivalent Circuit
B
D2-PAK
C
1
TO-220
E
1
1.Base 2.Collector 3.Emitter
KSC5504D/KSC5504DT
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
E
AS
* Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%
Thermal Characteristics
Collector-Base Voltage 1200 V
Collector-Emitter Voltage 600 V
Emitter-Base Voltage 12 V
Collector Current (DC) 4 A
*Collector Current (Pulse) 8 A
Base Current (DC) 2 A
*Base Current (Pulse) 4 A
Collector Dissipation (TC=25°C) 75 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
Avalanche Energy(Tj=25°C) 3 mJ
TC=25°C unless otherwise noted
Symbol Characteristics Rating Unit
R
θjc
R
θja
T
L
Thermal Resistance Junction to Case 1.65 °C/W
Junction to Ambient 62.5
Maximun Lead Temperature for Soldering Purpose
270 °C
: 1/8” from Case for 5 seconds
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
KSC5504D/KSC5504DT
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CES
I
CEO
I
EBO
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC=0.5A,
CE
(sat) Base-Emitter Saturation Voltage IC=0.8A,
V
BE
C
ib
C
ob
f
T
V
F
Collector-Base Breakdown Voltage IC=1mA, IE=0 1200 1350 V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0 600 750 V
Emitter-Base Breakdown Voltage IE=500µA, IC=0 12 13.7 V
Collector Cut-off Current V
V
CES
BE
=0
=1200V,
T
=25°C 100 µA
C
=125°C 500
T
C
Collector Cut-off Current VCE=600V, IB=0 TC=25°C 100 µA
=125°C 500
T
C
Emitter Cut-off Current VEB=12V, IC=0 TC=25°C10µA
DC Current Gain VCE=1V, IC=0.5A TC=25°C152035
=125°C10 13
T
=1V, IC=2A TC=25°C4 6
V
CE
=2.5V, IC=1A TC=25°C121830
V
CE
=0.05A
I
B
=1A, IB=0.2A TC=25°C0.180.5V
I
C
=2A, IB=0.4A TC=25°C0.51.5V
I
C
=0.08A
I
B
=2A, IB=0.4A TC=25°C0.851.2V
I
C
C
=125°C3 4.1
T
C
=125°C8 10
T
C
T
=25°C0.280.6V
C
=125°C0.51.0V
T
C
T
=125°C 0.3 0.75 V
C
=125°C2.03.0V
T
C
T
=25°C0.771.0V
C
=125°C0.600.9V
T
C
=125°C0.701.0V
T
C
Input Capacitance VEB=10V, IC=0, f=1MHz 600 750 pF
Output Capacitance VCB=10V, IE=0, f=1MHz 75 100 pF
Current Gain Bandwidth Product IC=0.5A,VCE=10V 11 MHz
Diode Forward Voltage IF=1A TC=25°C0.831.3V
=125°C0.7 V
T
=2A TC=25°C0.881.5V
I
F
C
=125°C0.8 V
T
C
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
KSC5504D/KSC5504DT
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min Ty p. Max. Units
t
fr
(DSAT) Dynamic Saturation Voltage IC=1A,
V
CE
RESISTIVE LOAD SWITCHING (D.C <
t
ON
t
STG
t
F
t
ON
t
STG
t
F
INDUCTIVE LOAD SWITCHING (V
t
STG
t
F
t
C
t
STG
t
F
t
C
Diode Froward Recvery Time
(di/dt=10A/µs)
10%, Pulse Width=40µs)
Turn ON Time IC=2A, IB1=0.4A
Storage Time TC=25°C1.52.5µs
Fall Time TC=25°C 125 300 ns
Turn ON Time IC=2A, IB1=0.4A
Storage Time TC=25°C2.83.5µs
Fall Time TC=25°C 400 650 ns
=15V)
CC
Storage Time IC=2A, IB1=0.4A
Fall Time TC=25°C 100 250 ns
Cross-over Time TC=25°C 210 400 ns
Storage Time IC=2A, IB1=0.4A
Fall Time TC=25°C 170 350 ns
Cross-over Time TC=25°C 540 800 ns
IF=0.4A
=1A
I
F
I
=2A
F
=100mA
I
B1
=300V
V
CC
I
=2A,
C
I
=400mA
B1
=300V
V
CC
=1A,
I
B2
V
=300V
CC
= 150Ω
R
L
=0.4A,
I
B2
V
=300V
CC
= 150Ω
R
L
=1A, VZ=300V
I
B2
L
=200H
C
=0.4A,
I
B2
V
=300V
CC
=200H
L
C
@ 1µs10V
@ 3µs3V
@ 1µs10V
@ 3µs2V
T
=25°C 160 250 ns
C
=125°C 170 ns
T
C
=125°C1.7 µs
T
C
T
=125°C 160 ns
C
T
=25°C 170 300 ns
C
=125°C 175 ns
T
C
=125°C3.1 µs
T
C
=125°C 850 ns
T
C
=25°C1.752.5µs
T
C
=125°C2.2 µs
T
C
=125°C 100 ns
T
C
=125°C 250 ns
T
C
T
=25°C3.64.5µs
C
=125°C4.2 µs
T
C
=125°C 320 ns
T
C
=125°C1.1 ns
T
C
770
870
1.2
ns
ns
µs
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
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