Fairchild Semiconductor KSC5502DT, KSC5502D Datasheet

KSC5502D/KSC5502DT

KSC5502D/KSC5502DT

High Voltage Power Switch Switching
Application

• Wide Safe Operating Area

• Built-in Free-Wheeling Diode

• Suitable for Electronic Ballast Application

Equivalent Circuit

C

B

D-PAK

1

TO-220

• Small Variance in Storage Time

• Two Package Choices : D-PAK or TO-220

E

1

1.Base 2.Collector 3.Emitter

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

I

BP

P

C

T

J

T

STG

EAS Avalanche Energy(T

* Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%

Collector-Base Voltage 1200 V
Collector-Emitter Voltage 600 V
Emitter-Base Voltage 12 V
Collector Current (DC) 2 A
*Collector Current (Pulse) 4 A
Base Current (DC) 1 A
*Base Current (Pulse) 2 A
Collector Dissipation (TC=25°C) 50 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C

TC=25°C unless otherwise noted

=25°C) 2.5 mJ

j

Thermal Characteristics

TC=25°C unless otherwise noted

Symbol Characteristics Rating Unit

R

θjc

R

θja

T

L

Thermal Resistance Junction to Case 2.5 °C/W

Junction to Ambient 62.5

Maximun Lead Temperature for Soldering Purpose

270 °C

: 1/8” from Case for 5 seconds

©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001

KSC5502D/KSC5502DT

Electrical Characteristics T

=25°C unless otherwise noted

C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

BV

CEO

BV

EBO

I

CES

I

CEO

I

EBO

h

FE

V

(sat) Collector-Emitter Saturation Voltage IC=0.2A,

CE

(sat) Base-Emitter Saturation Voltage IC=0.4A,

V

BE

C

ib

C

ob

f

T

V

F

Collector-Base Breakdown Voltage IC=1mA, IE=0 1200 1350 V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0 600 750 V
Emitter-Base Breakdown Voltage IE=500µA, IC=0 12 13.7 V
Collector Cut-off Current V

V

CES
BE

=0

=1200V,

T

=25°C 100 µA

C

=125°C 500

T

C

Collector Cut-off Current VCE=600V, IB=0 TC=25°C 100 µA

=125°C 500

T

C

Emitter Cut-off Current VEB=12V, IC=0 TC=25°C10µA
DC Current Gain VCE=1V, IC=0.2A TC=25°C152840

=125°C8 18

T

=1V, IC=1A TC=25°C46.4

V

CE

=2.5V,

V

CE

=0.5A

I

C

=0.02A

I

B

=0.4A,

I

C

=0.08A

I

B

=1A, IB=0.2A TC=25°C0.401.5V

I

C

=0.08A

I

B

=1A, IB=0.2A TC=25°C0.831.2V

I

C

C

=125°C3 4.7

T

C

T

=25°C122030

C

=125°C6 12

T

C

T

=25°C0.310.8V

C

=125°C0.541.1V

T

C

T

=25°C0.150.6V

C

T

=125°C0.231.0V

C

=125°C1.33.0V

T

C

T

=25°C0.771.0V

C

=125°C0.600.9V

T

C

=125°C0.701.0V

T

C

Input Capacitance VEB=8V, IC=0, f=1MHz 385 500 pF
Output Capacitance VCB=10V, IE=0, f=1MHz 60 100 pF
Current Gain Bandwidth Product IC=0.5A,VCE=10V 11 MHz
Diode Forward Voltage IF=0.2A TC=25°C0.751.2V

=125°C0.59 V

T

=0.4A TC=25°C0.801.3V

I

F

I

=1A TC=25°C0.91.5V

F

C

=125°C0.64 V

T

C

©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001

KSC5502D/KSC5502DT

Electrical Characteristics T

=25°C unless otherwise noted

C

Symbol Parameter Test Condition Min Ty p. Max. Uni ts

t

fr

(DSAT) Dynamic Saturation Voltage IC=0.4A, IB1=80mA

V

CE

RESISTIVE LOAD SWITCHING (D.C <
t

ON

t

OFF

t

ON

t

OFF

INDUCTIVE LOAD SWITCHING (V
t

STG

t

F

t

C

t

STG

t

F

t

C

Diode Froward Recvery Time
(di/dt=10A/µs)

IF=0.2A

=0.4A

I

F

I

=1A

F

=300V

V

CC

=1A, IB1=200mA

I

C

=300V

V

CC

10%, Pulse Width=20s)

Turn On Time IC=0.4A,

=80mA

I

B1

=0.2A,

I

Turn Off Time TC=25°C2.13.0µs

B2

V

CC

= 750Ω

R

L

=300V

Turn On Time IC=1A,

=160mA

I

B1

I

=160mA,

Turn Off Time TC=25°C3.75.0µs

=15V)

CC

B2

V

CC

= 300Ω

R

L

=300V

Storage Time IC=0.4A,

I

=80mA

B1

=0.2A,

I

Fall Time TC=25°C 90 200 ns

Cross-over Time TC=25°C 185 350 ns

B2

V

Z

L

C

=300V
=200H

Storage Time IC=0.8A,

I

=160mA

B1

=160mA,

I

Fall Time TC=25°C 90 250 ns

Cross-over Time TC=25°C 300 600 ns

B2

V

CC

L

C

=300V

=200H

@ 1µs7.2V
@ 3µs1.8V
@ 1µs18V
@ 3µs6V

=25°C 175 350 ns

T

C

T

=125°C 185 ns

C

=125°C2.6 µs

T

C

=25°C 240 450 ns

T

C

=125°C 310 ns

T

C

=125°C4.5 µs

T

C

=25°C1.22.0µs

T

C

T

=125°C1.5 µs

C

=125°C65 ns

T

C

T

=125°C 145 ns

C

=25°C3.34.5µs

T

C

=125°C3.75 µs

T

C

=125°C 160 ns

T

C

=125°C 570 ns

T

C

650
740
785

ns
ns
ns

©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001

Typical Characteristics

KSC5502D/KSC5502DT

3

2

1

[A], COLLECTOR CURRENT

C

I

0

01234567

VCE[V], CO L L EC T O R E M IT T E R V O LT A GE

1A

900mA

800mA

700mA

600mA

500mA

400mA

300mA

200mA

IB=100mA

100

10

, DC CURRENT GAIN

FE

h

1

1m 10m 100m 1

TJ=125

℃℃℃℃

IC[A], COLLECTOR CURRENT)

Figure 1. Static Characteristic Figure 2. DC current Gain

IC=10I

IC=5I

B

10

1

(V), VOLTAGE

CE(sat)

V

0.1

1m 10m 100m 1

IC(A), COLLECTOR CURRENT

TJ=125℃℃℃

10

(V), VOLTAGE

℃

℃

TJ=25℃℃℃

CE(sat)

V

0.1

B

1

1m 10m 10 0m 1

IC(A), COLLECTOR CURRENT

TJ=25

VCE=1V

℃℃℃℃

℃

TJ=125℃℃℃

℃

TJ=25℃℃℃

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage

2

℃℃℃℃

TJ=25

1

[V], VO LT A G E

CE

V

IC=0.2A

0

1m 10m 100m 1

IB[A], BASE CURRENT

Figure 5. Typical Collector Saturation Voltage Figure 6. Base-Emitter Saturation Voltage

©2001 Fairchild Semiconductor Corporation

0.4A

2.0A

1.5A

1.0A

10

IC=10I

B

1

[V], V OLTA G E

BE

V

0.1
1m 10m 100m 1

TJ=25

℃℃℃℃

℃℃℃℃

TJ=125

IC[A], C OL L ECTOR C UR REN T

Rev. A2, August 2001