Fairchild Semiconductor KSC5405F Datasheet
KSC5405F
High Voltage Power Switching Applications
KSC5405F
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Collector-Base Voltage 1000 V
Collector-Emitter Voltage 450 V
Emitter-Base Voltage 9 V
Collector Current (DC) 5 A
Collector Current (Pulse) 10 A
Base Current (DC) 2 A
Base Current (Pulse) 4 A
Collector Dissipation ( TC=25°C) 40 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) *Collector-Emitter Sustaining Voltage IC = 100mA, IB = 0 450
CEO
I
CES
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 2.5A, IB = 0.5A 1.5
V
CE
(sat) Base-Emitter Saturation Voltage: IC = 2.5A, IB = 0.5A 1.3
VBE
t
ON
t
STG
tF
* Pulsed Test: PW = 300uS, duty cycle = 1.5%
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain VCE=5V, IC=0.6A 10 40
Turn On Time V
Storage Time 4
Fall Time 0.8
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 1000V, V
CE
= 9V, IC = 0 10
BE
= 250V, IC = 2.5A
CC
I
= -IB2 = 0.5A
B1
=100Ω
R
L
= 0 1
BE
1
mA
mA
µs
µ
µ
V
V
V
s
s
©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
Typical Characteristics
KSC5405F
100
10
(sat) [V], SATUR AT ION VOLTA G E
CE
V
1
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
2.0
1.5
1.0
0.5
(sat) [V], SATURATION VOLTA GE
BE
V
0.0
0.01 0.1 1 10 100
IC[A], COLLECTO R CURRENT
IC=5I
IC=5I
2.0
B
1.5
1.0
0.5
(sat) [V], SATURAT ION VOLTAGE
CE
V
0.0
0.01 0.1 1 10 100
IC=5I
B
IC[A], COLLECTOR CURREN T
10
B
1
0.1
[A], COLLECTOR CU RRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-EMITTER V O LTAG E
Figure 3. Base-Emitter Saturation Voltage Figure 4. Safe Operating Area
10
8
6
4
[A], COLLECTOR CURRENT
C
2
I
0
0 200 400 600 800 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
60
50
40
30
20
[W], POWER DISSIPATION
D
P
10
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 5. Reverse Bias Safe Operating Area Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
Loading...