Fairchild Semiconductor KSC5402DT, KSC5402D Datasheet

KSC5402D/KSC5402DT

High Voltage High Speed Power Switch Application

• Wide Safe Operating Area

• Built-in Free Wheeling Diode

• Suitable for Electronic Ballast Application

Equivalent Circuit

C

1

TO-220

B

• Small Variance in Storage Time

D-PAK

• Two Package Choices; D-PAK or TO-220

E

1

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor Planar Silicon Transistor

Absolute Maximum Ratings

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

I

BP

P

C

T

J

T

STG

* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%

Collector-Base Voltage 1000 V Collector-Emitter Voltage 450 V Emitter-Base Voltage 12 V Collector Current (DC) 2 A *Collector Current (Pulse) 5 A Base Current (DC) 1 A *Base Current (Pulse) 2 A Power Dissipation(TC=25°C) : D-PAK *

: TO-220 Junction Temperature 150 °C Storage T emperature - 65 ~ 150 °C

TC=25°C unless otherwise noted

30 50

W

Thermal Characteristics

Symbol Characteristics

R

θjc

R

θja

T

L

* Mounted on 1” square PCB (FR4 ro G-10 Material)

Thermal Resistance Junction to Case 2.5 4.17 * °C/W

Maximum Lead Temperature for Soldering Purpose ; 1/8” from Case for 5 Seconds

TC=25°C unless otherwise noted

Rating Unit

TO-220 D-PAK

Junction to Ambient 62.5 50

270 270 °C

KSC5402D/KSC5402DT

Electrical Characteristics T

=25°C unless otherwise noted

C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

BV

CEO

BV

EBO

I

CES

I

CEO

I

EBO

h

FE

(sat) Collector-Emitter Saturation Voltage IC=0.4, IB=0.04A TC=25°C0.250.6

V

CE

(sat) Base-Emitter Saturation Voltage IC=0.4A,

V

BE

C

ib

C

ob

f

T

V

F

Collector-Base Breakdown Voltage IC=1mA, IE=0 1000 1090 V Collector-Emitter Breakdown Voltage IC=5mA, IB=0 450 525 V Emitter-Base Breakdown Voltage IE=1mA, IC=0 12 14 V Collector Cut-off Current V

I

EB

CES

=0

=1000V,

T

=25°C 0.03 100 µA

C

=125°C 1.2 500

T

C

Collector Cut-off Current VCE=450V, VB=0 TC=25°C 0.3 100 µA

=125°C 15 500

T

C

Emitter Cut-off Current VEB=10V, IC=0 0.01 100 µA DC Current Gain VCE=1V, IC=0.4A TC=25°C1429

=125°C8 17

T

=1V, IC=1A TC=25°C69

V

CE

I

=1A, IB=0.2A TC=25°C 0.3 0.75 V

C

=0.04A

I

B

=1A, IB=0.2A TC=25°C0.851.1V

I

C

=125°C4 6

T

C

=125°C0.41.0

T

C

=125°C0.651.2V

T

C

T

=25°C0.781.0V

C

T

=125°C0.650.9V

C

=125°C0.751.0V

T

C

Input Capacitance VEB=8V, IC=0, f=1MHz 330 500 pF Output Capacitance VCB=10V, IE=0, f=1MHz 35 100 pF Current Gain Bandwidth Product IC=0.5A, VCE=10V 11 MHz Diode Forward Voltage IF=1A TC=25°C0.861.5V

I

=0.2A TC=25°C0.751.2V

F

=0.4A TC=25°C0.81.3V

I

F

=125°C0.6 V

T

C

=125°C0.65 V

T

C

KSC5402D/KSC5402DT

Electrical Characteristics T

=25°C unless otherwise noted

C

Symbol Parameter Test Condition Min Typ. Max. Uni ts

t

fr

(DSAT) Dynamic Saturation Voltage IC=0.4A,

V

CE

RESISTIVE LOAD SWITCHING (D.C < t

ON

t

OFF

INDUCTIVE LOAD SWITCHING (V t

STG

t

F

t

C

t

STG

t

F

t

C

t

STG

t

F

t

C

Diode Froward Recvery Time (di/dt=10A/µs)

10%, Pulse Width=20µs)

Turn On Time IC=1A,

Turn Off Time TC=25°C 0.95 1.25 µs

=15V)

CC

Storage Time IC=0.4A,

Fall Time TC=25°C 60 175 ns

Cross-over Time TC=25°C 90 175 ns

Storage Time IC=0.8A,

Fall Time TC=25°C 110 175 ns

Cross-over Time TC=25°C 125 350 ns

Storage Time IC=1A,

Fall Time TC=25°C 105 150 ns

Cross-over Time TC=25°C 125 150 ns

IF=0.2A

=0.4A

I

F

I

=1A

F

=40mA

I

B1

=300V

V

CC

I

=1A,

C

I

=200mA

B1

=300

V

CC

=200mA

I

B1

I

=150mA

B2

=300V

V

CC

= 300Ω

R

L

I

=40mA

B1

=200mA,

I

B2

Vz=300V L

=200H

C

I

=160mA

B1

=160mA,

I

B2

Vz=300V L

=200H

C

I

=200mA,

B1

=500mA,

I

B2

=300V

V

Z

L

=200µH

C

@ 1µs7.5V @ 3µs2.5V

@ 1µs11.5V @ 3µs1.5V

=25°C 110 150 ns

T

C

=125°C 135 ns

T

C

=125°C1.4 µs

T

C

=25°C0.560.65µs

T

C

T

=125°C0.7 µs

C

=125°C75 ns

T

C

=125°C90 ns

T

C

=25°C2.75µs

T

C

=125°C3 µs

T

C

=125°C 180 ns

T

C

=125°C 185 ns

T

C

=25°C1.11.2µs

T

C

=125°C1.35 µs

T

C

=125°C75 ns

T

C

=125°C 100 ns

T

C

540 520 480

ns ns ns