Fairchild Semiconductor KSC5367F Datasheet
KSC5367F
High Voltage and High Reliability
• High speed Switching
• Wide Safe Operating Area
• High Collector-Base Voltage
KSC5367F
1
1.Base 2.Collector 3.Emitter
TO-220F
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
* Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Collector-Base Voltage 1600 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 12 V
Collector Current (DC) 3 A
*Collector Curren (Pulse) 6 A
Base Current (DC) 2 A
*Base Current (Pulse) 4 A
Power Dissipation(TC=25°C) 40 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Thermal Characteristics
Symbol Characteristics Rating Unit
R
θjc
R
θja
Thermal Resistance Junction to Case 3.1 °C/W
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
Junction to Ambient 62.5
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
KSC5367F
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 250mA, IB = 25mA
V
CE
(sat) Base-Emitter Saturation Voltage IC = 500mA, IB = 50mA - - 1.5 V
V
BE
C
ob
t
ON
t
STG
t
F
t
ON
t
STG
t
F
Collector-Base Breakdown Voltage IC = 0.5mA, IE = 0 1600 - - V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 800 - - V
Emitter-Base Breakdown Voltage IC =0.5mA, IC = 0 12 - - V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
Output Capacitance V
Turn On Time V
Storage Time - 2.2 µs
Falling Time - - 0.5 µs
Turn On Time V
Storage Time - - 4.0 µs
Falling Time - - 0.5 µs
= 1,600V, IE = 0 - - 20 µA
CB
= 12V, IC = 0 - - 20 µA
EB
= 3V, IC = 0.4A
CE
= 10V, IC = 5mA
V
CE
I
= 500mA, IB = 50mA
C
= 1A, IB = 0.2A
I
C
=10V, IE = 0, f = 1MHz - 40 - pF
CB
= 125V, IC = 0.5A
CC
= 42mA, IB2 = -333mA
I
B1
R
= 250Ω
L
= 250V, IC = 1A
CC
= 0.2A, IB2 = -0.4A
I
B1
R
= 250Ω
L
12
8
-
-
-
-
35
-
-
-
-
--0.5µs
--0.5µs
-
2.5
4.0
2.5
V
V
V
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
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