Fairchild Semiconductor KSC5367 Datasheet
High Voltage and High Reliability
• High speed Switching
• Wide Safe Operating Area
• High Collector Base Voltage
KSC5367
KSC5367
1
1.Base 2.Collector 3.Emitter
TO-220
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
* Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Collector-Base Voltage 1600 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 12 V
Collector Current (DC) 3 A
*Collector Current (Pulse) 6 A
Base Current 2 A
*Base Current (Pulse) 4 A
Power Dissipation(Tc=25) 80 W
Junction T emperature 150 °C
Storage Temperature - 65 ~ 150 °C
Thermal Characteristics
Symbol Characteris tics Rating Unit
R
θjc
R
θja
Thermal Resistance Junction to Case 1.56 °C/W
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
Junction to Ambient 62.5
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
KSC5367
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 250mA, IB = 25mA
V
CE
(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A - - 1.5 V
V
BE
C
ob
t
ON
t
STG
t
F
t
ON
t
STG
t
F
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1600 - - V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 800 - - V
Emitter-Base Breakdown Voltage IC =0.5mA, IC = 0 12 - - V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
= 1,600V, IE = 0 - - 20 µA
CB
= 12V, IC = 0 - - 20 µA
EB
= 3V, IC = 0.4A
CE
= 10V, IC = 5mA
V
CE
I
= 500mA, IB = 50mA
C
= 1A, IB= 0.2A
I
C
12
8
-
-
-
-
-
-
-
-
35
-
2.5
4.5
2.5
Output Capacitance IC = 500mA, IB = 50mA - 40 pF
Turn ON Time V
Storage Time - 2.2 µs
Fall Time - - 0.5 µs
Turn ON Time V
Storage Time - - 4.0 µs
Fall Time - - 0.5 µs
= 125V, IC = 0.5A
CC
= 42mA, IB2 = -333mA
I
B1
R
= 250Ω
L
= 250V, IC = 1A
CC
= 0.2A, IB2 = -0.4A
I
B1
R
= 250Ω
L
-- 0.5µs
-- 0.5µs
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
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