Fairchild Semiconductor KSC5338F Datasheet
KSC5338F
High Voltage Power Switch Switching
Application
• High Speed Switching
• Wide SOA
KSC5338F
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
C
I
CP
IB
IBP
P
T
T
CBO
CEO
EBO
C
J
STG
Collector-Base Voltage 1000 V
Collector-Emitter Voltage 450 V
Emitter-Base Voltage 9 V
Collector Current (DC) 5 A
Collector Current (Pulse) 10 A
Base Current (DC) 2 A
Base Current (Pulse) 4 A
Collector Dissipation (TC=25°C) 40 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BVEBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 0.1A
V
CE
(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 0.1A
V
BE
C
ob
C
ib
fT
t
ON
t
STG
t
F
* Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1000 V
Collector-Emitter Breakdown Voltage IC = 5mA, IB =0 450 V
Emitter-Base Breakdown Voltage IC=1mA, IE=0 9 V
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Output Capacitance V
Input Capacitance VEB=8V, IC=0, f =1MHz 100 0 pF
Current Gain Bandwidth Product V
Turn ON Time V
Storage Time 2 µs
Fall Time 500 ns
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 800V, V
CB
= 9V, IC = 0 10 µA
EB
= 5V, IC = 0.5A
CE
V
= 1V, IC = 2A
CE
= 2A, IB = 0.4A
I
C
= 2A, IB = 0.4A
I
C
= 10V, f =1MHz 70 pF
CB
= 10V, IC = 0.1A 14 MHz
CE
= 125V, IC = 1A
CC
I
= 0.2A, IB2 = -0.2A
B1
=125Ω
R
L
= 0 10 µA
BE
15
30
6
0.55 0.8
0.5
1.1
1.25
200 ns
V
V
V
V
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
KSC5338F
5
4
3
2
[A], COLLECTOR CURRENT
1
C
I
0
0246810
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB = 1A
IB=900mA
IB = 800mA
IB = 700mA
IB = 600mA
IB = 500mA
IB = 400mA
IB = 300mA
IB = 200mA
IB = 100mA
IB = 0
100
10
1
, DC CURRENT GAIN
FE
h
0.1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
100
10
VCE = 1V
1
, DC CURRENT GAIN
FE
h
10
1
VBE(sat)
VCE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
VCE = 5V
IC = 10I
B
0.1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 5. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
©2000 Fairchild Semiconductor International
VBE(sat)
VCE(sat)
(sat), V
0.01
BE
V
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Collect-Emitter Saturation Voltage
10
1
[µs], TIME
F
, t
STG
t
0.1
0.1 1 10
IC[A], COLLECTOR CURRENT
t
STG
t
F
Figure 6. Switching Time
Rev. A, February 2000
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