Fairchild Semiconductor KSC5338DW, KSC5338D Datasheet

KSC5338D/KSC5338DW

High Voltage Power Switch Switching Application

• Wide Safe Operating Area

• Built-in Free-Wheeling Diode

• Suitable for Electronic Ballast Application

• Small Variance in Storage Time

• Two Package Choices : TO-220 or D2-PAK

NPN Triple Diffused Planar Silicon Transistor

Equivalent Circuit

B

D2-PAK

C

1

TO-220

E

1.Base 2.Collector 3.Emitter

1

KSC5338D/KSC5338DW

Absolute Maximum Ratings

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

I

BP

P

C

T

J

T

STG

* Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%

Collector-Base Voltage 1000 V Collector-Emitter Voltage 450 V Emitter-Base Voltage 12 V Collector Current (DC) 5 A *Collector Current (Pulse) 10 A Base Current (DC) 2 A *Base Current (Pulse) 4 A Power Dissipation(TC=25°C) 75 W Junction T emperature 150 °C Storage Temperature - 55 ~ 150 °C

Thermal Characteristics

Symbol Characteristics Rating Unit

R

θjc

R

θja

T

L

Thermal Resistance Junction to Case 1.65 °C/W

Maximun Lead Temperature for Soldering 270 °C

TC=25°C unless otherwise noted

Junction to Ambient 62.5

KSC5338D/KSC5338DW

Electrical Characteristics T

=25°C unless otherwise noted

C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

CES

I

CEO

I

EBO

h

FE

(sat) Collector-Emitter Saturation Voltage IC=0.8A, IB=0.08A TC=25°C 0.35 0.5 V

V

CE

(sat) Base-Emitter Saturation Voltage ICS=0.8A,

V

BE

C

ib

C

ob

f

T

V

F

t

fr

V

CE(DSAT)

Collector-Base Breakdown Voltage IC=1mA, IE=0 1000 V Collector-Emitter Breakdown Voltage IC=5mA, IB=0 450 V Emitter-Base Breakdown Voltage IE=1mA, IC=0 12 V Collector Cut-off Current VCB=800V, IE=0 10 µA Collector Cut-off Current V

I

EB

CES

=0

=1000V,

T

=25°C 100 µA

C

=125°C 500 µA

T

C

Collector Cut-off Current VCE=450V, IB=0 TC=25°C 100 µA

=125°C 500 µA

T

C

Emitter Cut-off Current VEB=10V, IC=0 10 µA DC Current Gain VCE=1V, IC=0.8A TC=25°C1525

=125°C10 14

T

=1V, IC=2A TC=25°C6 9

V

CE

=2.5V, IC=1A TC=25°C1825

V

CE

I

=2A, IB=0.4A TC=25°C0.470.75V

C

=0.8A, IB=0.04A TC=25°C0.91.5V

I

C

=1A, IB=0.2A TC=25°C 0.22 0.5 V

I

C

=0.08A

I

B

=2A, IB=0.4A TC=25°C0.91.0V

I

C

=125°C4 6

T

C

T

=125°C14 18

C

=125°C0.550.75V

T

C

=125°C0.91.1V

T

C

=125°C1.82.5V

T

C

=125°C0.30.6V

T

C

T

=25°C0.81.0V

C

T

=125°C 0.65 0.9 V

C

=125°C0.80.9V

T

C

Input Capacitance VEB=10V, IC=0.5A, f=1MHz 550 750 pF Output Capacitance VCB=10V, IE=0, f=1MHz 60 100 pF Current Gain Bandwidth Product IC=0.5A,VCE=10V 11 MHz Diode Forward Voltage IF=1A, IC=1mA,

=0

I

E

I

=2A TC=25°C 0.95 1.5 V

F

Diode Froward Recvery Time (di/dt=10A/µs)

IF=0.4A

=1A

I

F

=2A

I

F

Dynamic Saturation Voltage IC=1A, IB1=100mA

V

=300V at 1 µs

CC

=1A, IB1=100mA

I

C

V

=300V at 3 µs

CC

I

=2A, IB1=400mA

C

=300V at 1 µs

V

CC

=2A, IB1=400mA

I

C

=300V at 3 µs

V

CC

T

=25°C 0.86 1.3 V

C

=125°C0.79 V

T

C

=125°C0.88 V

T

C

460 360 325

=25°C8 V

T

C

=125°C15 V

T

C

=25°C2.9 V

T

C

=125°C8 V

T

C

T

=25°C9 V

C

=125°C17 V

T

C

T

=25°C1.9 V

C

=125°C8.5 V

T

C

ns ns ns

KSC5338D/KSC5338DW

Electrical Characteristics T

=25°C unless otherwise noted

C

Symbol Parameter Test C ondition Min Typ. Max. Units

RESISTIVE LOAD SWITCHING (D.C < t

ON

t

STG

t

F

t

ON

t

STG

t

F

t

ON

t

STG

t

F

Turn ON Time IC=2.5A, IB1=500mA Storage Time 1.2 1.5 µs Fall Time 100 200 ns Turn ON Time IC=2A,

Storage Time TC=25°C1.42.2µs

Fall Time TC=25°C 90 150 ns

Turn ON Time IC=2.5A,

Storage Time TC=25°C1.8 2.1µs

Fall Time TC=25°C 110 150 ns

INDUCTIVE LOAD SWITCHING (V t

STG

t

F

t

C

t

STG

t

F

t

C

t

STG

t

F

t

C

Storage Time IC=2.5A,

Fall Time TC=25°C 160 200 ns

Cross-over Time TC=25°C 350 500 ns

Storage Time IC=2A,

Fall Time TC=25°C 120 150 ns

Cross-over Time TC=25°C 300 450 ns

Storage Time IC=1A,

Fall Time TC=25°C70ns

Cross-over Time TC=25°C 80 130 ns

10%, Pulse Width=40µs)

I

B2

I

B1

I

B2

V R

I

B1

I

B2

V R

=15V)

CC

I

B1

I

B2

V L

I

B1

I

B2

V L

I

B1

I

B2

V L

=1A, VCC=250V, RL = 100Ω

T

=25°C 100 150 ns =400mA =1A,

=300V

CC

= 150Ω

L

=500mA =5mA,

=300V

CC

= 120Ω

L

=500mA =0.5A, =350V

Z

=300µH

C

=400mA =0.4A, =300V

Z

=200µH

C

=100mA =0.5A, =300V

Z

=200µH

C

=125°C 150 ns

T

C

=125°C1.7 µs

T

C

=125°C 150 ns

T

C

T

=25°C 120 150 ns

C

=125°C 150 ns

T

C

=125°C2.6 µs

T

C

=125°C 160 ns

T

C

T

=25°C1.92.2µs

C

=125°C2.4 µs

T

C

=125°C 330 ns

T

C

=125°C 750 ns

T

C

T

=25°C 1.95 2.25 µs

C

T

=125°C2.9 µs

C

=125°C 270 ns

T

C

=125°C 700 ns

T

C

T

=25°C0.60.8µs

C

=125°C1.0 µs

T

C

T

=125°C110 ns

C

=125°C 170 ns

T

C

500 750 ns