Fairchild Semiconductor KSC5321F Datasheet
KSC5321F
High Voltage and High Reliability
• High speed Switching
• Wide Safe Operating Area
KSC5321F
1
1.Base 2.Collector 3.Emitter
TO-220F
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
* Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Collector-Base Voltage 800 V
Collector-Emitter Voltage 500 V
Emitter-Base Voltage 7 V
Collector Current (DC) 5 A
*Collector Current (Pulse) 10 A
Base Current (DC) 2 A
*Base Current (Pulse) 4 A
Power Dissipation(Tc=25) 40 W
Junction T emperature 150 °C
Storage Temperature - 55 ~ 150 °C
Thermal Characteristics
Symbol Characteristics Rating Unit
R
θjc
R
θja
Thermal Resistance Junction to Case 3.1 °C/W
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
Junction to Ambient 62.5
©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
KSC5321F
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A - - 1.0 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A - - 1.5 V
V
BE
f
T
C
ob
C
ib
t
ON
t
STG
t
F
t
ON
t
STG
t
F
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 - - V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 500 - - V
Emitter-Base Breakdown Voltage IC =1mA, IC = 0 7 - - V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
= 800V, IE = 0 - - 10 µA
CB
= 7V, IC = 0 - - 10 µA
EB
= 5V, IC = 0.6A
CE
= 5V, IC = 3A
V
CE
15
8
-
-
40
-
Current Gain Bandwidth Product VCE= 10V, IC = 0.6A 14 - MHz
Output Capacitance V
Input Capacitance V
Turn On Time V
Storage Time - 6.5 µs
Fall Time - - 0.3 µs
Turn On Time V
Storage Time - - 3.0 µs
Fall Time - - 0.3 µs
= 10V, IE = 0, f = 1M Hz - 65 100 pF
CB
= 7V , IC = 0 , f = 1 M H z - 1400 2000 pF
EB
= 250V, IC = 1A
CC
I
= -IB2 = 0.2A
B1
= 250Ω
R
L
= 250V, IC = 4A
CC
I
= 0.8A, IB2 = -1.6A
B1
= 125Ω
R
L
-- 0.5µs
-- 0.5µs
©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
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