Fairchild Semiconductor KSC5305D Datasheet
KSC5305D
KSC5305D
High Voltage High Speed Power Switch
Application
• Built-in Free-wheeling Diode makes efficient anti saturation operation
• Suitable for half bridge light ballast Applications
• No need to interest an hFE value because of low variable storage-time
spread even though corner spirit product
• Low base drive requirement
Equivalent Circuit
B
C
1
1.Base 2.Collector 3.Emitter
E
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
I
I
P
T
T
CBO
CEO
EBO
C
CP
B
BP
C
J
STG
Collector Base Voltage 800 V
Collector Emitter Voltage 400 V
Emitter Base Voltage 12 V
Collector Current (DC) 5 A
*Collector Current (Pulse) 10 A
Base Current (DC) 2 A
*Base Current (Pulse) 4 A
Power Dissipation(TC=25°C) 75 W
Junction T emperature 150 °C
Storage Temperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
TO-220
Thermal Characteristics
Symbol Characteristics Rating Unit
R
θjc
R
θja
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Thermal Resistance Junction to Case 1.65 °C/W
TC=25°C unless otherwise noted
Junction to Ambient 62.5
KSC5305D
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=0.8A, IB=0.08A
V
CE
V
(sat) Ba se-E mitter Sat uration Voltage IC=0.8A, IB=0.08A
BE
C
ob
t
ON
t
STG
t
F
t
STG
t
F
V
F
t
rr
*Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10%
Collector-Base Breakdown Voltage IC=1mA, IE=0 800 - - V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 - - V
Emitter Cut-off Cu rr en t IE=1mA, IC=0 12 - - V
Collector Cut-off Current VCB=500V, IE=0 - - 10 µA
Emitter Cut-off Cu rr en t V
DC Current Gain VCE=1V, IC=0.8A
= 9V , IC = 0 - - 10 µA
EB
=1V,IC=2A
V
CE
I
=2A, IB=0.4A
C
=2A, IB=0.4A
I
C
22
8
-
-
-
-
-
-
-
-
-
-
-
-
0.4
0.5
1.0
1.0
Output Capacitance VCB = 10V, f=1MHz - - 75 pF
Turn ON Time VCC=300V, IC =2A
= 0.4A, IB2=-1A
I
Storage Time - - 2 µs
Fall Time - - 0.2 µs
B1
R
= 150Ω
L
Storage Time VCC=15V,VZ=300V
= 2A,I
I
Fall Time - - 150 ns
C
I
= -0.4A, LC=200µH
B2
B1
= 0.4A
Diode Forward Voltage IF = 1A
= 2A
I
* Reverse recovery time
(di/dt = 10A/µs)
F
IF = 0.4A
= 1A
I
F
I
= 2A
F
- - 150 ns
- - 2.25 µs
-
-
-
-
-
800
1.4
1.9
-
1.5
-
1.6
-
-
-
V
V
V
V
V
V
ns
µs
µs
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
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