Fairchild Semiconductor KSC5302D Datasheet

KSC5302D

KSC5302D

High Voltage High Speed Power Switch
Application

• High Breakdown Voltage : BV

• Built-in Free-wheeling Diode makes efficient anti saturation operation

• Suitable for half bridge light ballast Applications

• No need to interest an h
spread

• Even though corner spirit product

• Low base drive requirement

FE

=800V

CBO

value because of low variable storage-time

Equivalent Circuit

B

C

1

E

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor

Absolute Maximum Ratings

Symbol Parameter Value Units

V
V
V
I
I
I
I
P
T
T

CBO
CEO

EBO
C
CP
B
BP

C

J

STG

Collector-Base Voltage 800 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 12 V
Collector Current (DC) 2 A
*Collector Current (Pulse) 5 A
Base Current (DC) 1 A
*Base Current (Pulse) 2 A
Power Dissipation(TC=25°C) 50 W
Junction T emperature 150 °C
Storage Temperature - 55 ~ 150 °C

TC=25°C unless otherwise noted

TO-220

Thermal Characteristics

Symbol Characteris tics Rating Unit

R

θjc

R

θja

©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002

Thermal Resistance Junction to Case 2.5 °C/W

TC=25°C unless otherwise noted

Junction to Ambient 62.5

KSC5302D

Electrical Characteristics T

=25°C unless otherwise noted

C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE1

h

FE2

(sat) Collector-Emitter Saturation Voltage IC=0.4A, IB=0.04A

V

CE

V

(sat) Ba se-E mitter Sat uration Voltage IC=0.4A, IB=0.04A

BE

C

ob

t

ON

t

STG

t

F

t

STG

t

F

V

F

t

rr

*Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10%

Collector-Base Breakdown Voltage IC=1mA, IE=0 800 - - V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 - - V
Emitter Cut-off Cu rr en t IE=1mA, IC=0 12 - - V
Collector Cut-off Current VCB=500V, IE=0 - - 10 µA
Emitter Cut-off Cu rr en t V
DC Current Gain VCE=1V, IC=0.4A

Output Capacitance V
Turn On time VCC=300V, IC =1A
Storage Time - - 2 µs
Fall Time - - 0.2 µs
Storage Time VCC=15V, VZ=300V
Fall Time - - 150 ns

Diode Forward Voltage IF = 0.4A

*Reverse Recovery Time
(di/dt = 10A/µs)

= 9V , IC = 0 - - 10 µA

EB

=1V, IC=1A

V

CE

I

=1A, IB=0.2A

C

=1A, IB=0.2A

I

C

= 10V, f=1MHz - - 75 pF

CB

20
10

-

-

-

-

-

-

-

-

-

-

- - 150 ns

= 0.2A, IB2=-0.5A,

I

B1

R

= 300Ω

L

- - 2.35 µs

= 0.8A, I

I

C

I

= -0.16A , L = 200µH

B2

= 1A

I

F

IF = 0.2A

= 0.4A

I

F

I

= 1A

F

= 0.16A

B1

-

-

-

-

-

-

-

800

1

1.4

-

-

0.4

0.5

0.9

1.0

1.2

1.5

-

-

-

V
V

V
V

V
V

ns

µs
µs

©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002