Fairchild Semiconductor KSC5200 Datasheet
Audio Power Amplifier
• High Current Capability : IC=13A
• High Power Dissipation
•Wide S.O.A
• Complement to KSA1943
KSC5200
KSC5200
1
1.Base 2.Collector 3.Emitter
TO-264
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage 230 V
Collector-Emitter Voltage 230 V
Emitter-Base Voltage 5 V
Collector Current(DC) 13 A
Base Current 1.5 A
Collector Dissipation (TC=25°C) 130 W
Junction Temperature 150 °C
Storage Temperature - 50 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=8A, IB=0.8A 0.4 3.0 V
V
CE
(on) Base-Emitter ON Voltage VCE=5V, IC=7A 1.0 1.5 V
V
BE
f
T
C
ob
* Pulse Test : PW=20us
Collector-Base Breakdown Voltage IC=5mA, IE=0 230 V
Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞ 230 V
Emitter-Base Breakdown Voltage IE=5mA, IC=0 5 V
Collector Cut-off Current VCB=230V, IE=0 5.0 uA
Emitter Cut-off Cu rr en t VEB=5V, IC=0 5.0 uA
* DC Current Gain VCE=5V, IC=1A 55 160
DC Current Gain VCE=5V, IC=7A 35 60
Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz
Output Capacitance VCB=10V, f=1MHz 200 pF
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
h
Classification
FE
Classification R O
h
FE1
©2001 Fairchild Semiconductor Corporation Rev. B1, Septmeber 2001
55 ~ 110 80 ~ 160
Typical Characteristics
KSC5200
16
14
12
10
8
6
4
[A], COLLECTOR CURRENT
C
I
2
0
0 2 4 6 8 10 12 14 16 18 20
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
IB=200mA
IB = 180mA
IB = 160mA
IB = 140mA
IB = 120mA
IB = 100mA
IB = 80mA
IB = 60mA
IB = 40mA
IB = 0
IC = 10 I
1000
100
10
, DC CURRENT GAIN
FE
h
1
1E-3 0.01 0.1 1 10 100
VCE = 5V
IC[A], COLLECTOR CURRENT
B
10
1
0.1
IC = 10I
B
(sat), SATURATION VOLTAGE
BE
V
0.01
1E-3 0.01 0.1 1 10 100
IC[A], COLLECTOR CURRENT
0.01
(sat)[V], SATURATION VOLTAGE
CE
V
1E-3 0.01 0.1 1 10 100
0.001
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
12
10
8
6
4
[A], COLLECTOR CURRENT
2
C
I
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VBE[V], BASE-EMITTER VOLTAGE
VCE = 5V
100
IC MAX. (Pulsed*)
10
IC MAX. (DC)
1
0.1
*SINGLE NONREPETITIVE
[A], COLLECTOR CURRENT
C
I
PULSE TC=25[oC]
0.01
110100
10ms*
100ms*
DC
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. B1, Septmeber 2001
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