Fairchild Semiconductor KSC5054 Datasheet

KSC5054

High Speed High Voltage Switching
Industrial Use

KSC5054

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings T

=25°C unless otherwise noted

C

1

1. Base 2. Collector 3. Emitter

I-PAK

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO
IB
IC
ICP

P

C
PC

T

J

T

STG

* PW≤300µs, Duty Cycle≤10%

Electrical Characteristics

Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 7 V
Base Current 0.25 A
Collector Current (DC) 0.5 A
*Collector Current (Pulse) 1 A
Collector Dissipation (Ta=25°C) 1 W
Collector Dissipation (TC=25°C) 10 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C

TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Uni ts

(sus) Collector-Emitter Sustaining Voltage IC = 0.3A, IB1 = 0.06A, L = 10mH 400 V

V

CEO

V

(sus)1 Collector-Emitter Sustaining Voltage IC = 0.3A, IB1 = -IB2 = 0.06A

CEX

V

(sus)2 Collector-Emitter Sustaining Voltage IC = 0.6A, IB1 = 0.2, L = 10mH

CEX

I

CBO

I

CER

IEBO

I

CEX1

I

CEX2

h

FE1

h

FE2

V

(sat) Collector-Emitter Saturation Voltage IC = 0.3A, IB = 0.06A 1 V

CE

(sat) Base-Emitter Saturation Voltage IC = 0.3A, IB = 0.06A 1.2 V

V

BE
tON
tSTG
tF

* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed

Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
Collector Cut-off Current V

DC Current Gain V

Turn ON Time V
Storage Time 2.5 µs
Fall Time 1 µs

(off) = -5V, L = 10mH

V

BE

2 = -0.06, VBE(off) = -5 V

I

B

= 400V, IE = 0 10 µA

CB

= 400V, R

CE

= 5V, IC = 0 10 µA

EB

= 400V, VBE (off) = -1.5V

CE

V

= 400V, VBE (off) = -1.5V @

CE

= 125°C

T

C

= 5V, IC = 0.05A

CE

= 5V, IC = 0.3A

V

CE

= 150V, IC = 0.3A

CC

I

= -IB2 = 0.06A, RL = 500Ω

B1

= 51Ω, TC = 125°C 1mA

BE

PW = 50µs, Duty Cycle≤2%

450 V

400 V

10

1

20

80

10

1 µs

µA

mA

hFE Classification

Classification R O Y

h

FE1

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

20 ~ 40 30 ~ 60 40 ~ 80

Typical Characteristics

KSC5054

= 45mA

I

B

I

B

= 30mA

= 35mA

I

B

= 40mA

I

B

= 25mA

I

B

= 20mA

I

B

= 15mA

I

B

= 10mA

I

B

= 5mA

I

B

0.5

= 50mA

I

0.4

0.3

0.2

[A], COLLECTOR CURRENT

C

0.1

I

0.0
012345

B

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. DC current Gain

10

1

0.1

(sat)[V], SATURATION VOLTAGE

CE

(sat), V

BE

V

0.01

0.1 1 10 100 1000

IC[mA], COLLECTOR CURRENT

IC = 5 I

VBE(sat)

VCE(sat)

1000

VCE = 5V

100

10

, DC CURRENT GAIN

FE

h

1

0.1 1 10 100 1000

IC[mA], COLLECTOR CURRENT

B

10

s), TIME

1

µ

(

F

, t

STG

t

0.1
10 100 1000

VCE(sat)

IC = 5 IB1 = -5 IB2

t

stg

t

f

t

on

IC[mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

10

IC(max). (Pulse)

1

DC

0.1

0.01

[mA], COLLECTOR CURRENT

C

I

1E-3

0.001
1 10 100 1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area Figure 6. Reverse Bias Safe Operating Area

©2001 Fairchild Semiconductor Corporation

1

Dissipation Limited

Figure 4. Switching Time

1.0

10

µ

s

100

m

µ

s

s

S/b Limited

V

CEO

(sus) MAX.

0.8

0.6

0.4

0.2

[A], COLLECTOR CURRENT

C

I

0.0
0 100 200 300 400 500

VCE[V], COLLECTOR-EMITTER VOLTAGE

CEO(SUS)

CEX(SUS)

V

V

Rev. A1, June 2001