Fairchild Semiconductor ISL9N303AS3ST, ISL9N303AS3, ISL9N303AP3 Datasheet

PWM Optimized

ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3

N-Channel Logic Level UltraFET® Trench MOSFETs 30V, 75A, 3.2mΩ

ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3

September 2002

General Description

This device employs a new advanced trench MOSFET

Features

• Fast switching technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

Applications

• DC/DC converters

DRAIN

(FLANGE)

TO-220AB

MOSFET Maximum Ratings T

GATE

SOURCE

DRAIN

GATE

SOURCE

TO-263AB

= 25°C unless otherwise noted

C

•r

•Q

•C

DRAIN

(FLANGE)

= 0.0026Ω (Typ), VGS = 10V

DS(ON)

= 0.004Ω (Typ), VGS = 4.5V

DS(ON)

(Typ) = 61nC, VGS = 5V

g

(Typ) = 17nC

gd

(Typ) = 7000pF

ISS

SOURCE

DRAIN

(FLANGE)

TO-262AB

DRAIN

GATE

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 30 V Gate to Source Voltage ±20 V Drain Current Continuous (T

I

D

Continuous (T Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 4.5V) 75 A

C

= 25oC, VGS = 10V, R

C

= 43oC/W) 25 A

θJA

75 A

Pulsed Figure 4

P

D

, T

T

J

STG

Power dissipation Derate above

Operating and Storage Temperature -55 to 175

215

1.43

W/

W

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-220, TO-262, TO-263 0.7 Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263 62 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

N303AS ISL9N303AS3ST TO-263AB 330mm 24mm 800 units N303AP ISL9N303AP3 TO-220AB Tube N/A 50 units N303AS ISL9N303AS3 TO-262AA Tube N/A 50 units

ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1

o

C/W

o

C/W

o

C/W

ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V

V

= 25V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150

V

GS

o

- - 250

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1-3V

I

= 75A, VGS = 10V - 0.0026 0.0032

Drain to Source On Resistance

D

= 75A, VGS = 4.5V - 0.004 0.005

I

D

Dynamic Characteristics

C C C Q Q Q Q Q

ISS OSS RSS

g(TOT) g(5) g(TH) gs gd

Input Capacitance Output Capacitance - 1350 - pF Reverse Transfer Capacitance - 570 - pF Total Gate Charge at 10V VGS = 0V to 10V Total Gate Charge at 5V VGS = 0V to 5V - 61 92 nC Threshold Gate Charge VGS = 0V to 1V - 6.5 9.8 nC Gate to Source Gate Charge - 14 - nC Gate to Drain “Miller” Charge - 17 - nC

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 22 - ns Rise Time - 80 - ns Turn-Off Delay Time - 35 - ns Fall Time - 25 - ns Turn-Off Time - - 90 ns

(VGS = 4.5V)

= 15V, VGS = 0V,

V

DS

f = 1MHz

V

= 15V, ID = 24A

DD

V

= 4.5V, RG = 2.4Ω

GS

V

DD

I

= 75A

D

= 1.0mA

I

g

= 15V

- 7000 - pF

115 172 nC

- - 155 ns

µA

Ω

Switching Characteristics (V

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 12 - ns Rise Time - 69 - ns Turn-Off Delay Time - 51 - ns Fall Time - 21 - ns Turn-Off Time - - 107 ns

GS

Unclamped Inductive Switching

t

AV

Avalanche Time ID = 4.1A L = 3.0 mH 275 - - µs

Drain-Source Diode Characteristics

V

SD

t

rr

Q

RR

Source to Drain Diode Voltage Reverse Recovery Time ISD = 75A, dISD/dt = 100A/µs- - 31 ns

Reverse Recovered Charge ISD = 75A, dISD/dt = 100A/µs- - 20 nC

= 10V)

- - 123 ns

= 15V, ID = 24A

V

DD

= 10V, RG = 2.4Ω

V

GS

I

= 75A - - 1.25 V

SD

= 35A - - 1.0 V

I

SD

ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1

Typical Characteristics

ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3

1.2

1

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

150

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

80

V

= 10V

GS

60

V

= 4.5V

GS

40

, DRAIN CURRENT (A)

D

20

I

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Figure 2. Maximum Contin uous Drain Current vs

Case Temperature

P

DM

t

1

t

0

x R

2

+ T

θJC

C

1

10

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

3000

1000

VGS = 10V

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

100

50

-5

10

Figure 3. Normalized Maximum Transient Thermal Impedance

TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:

I = I

VGS = 5V

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

Figure 4. Peak Current Capability

ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1

175 - T

25

10

C

150

-0

1

10

Typical Characteristics

ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3

150

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

= 15V

V

120

DD

90

60

, DRAIN CURRENT (A)

D

I

TJ = 25oC

30

0

1.522.533.5 VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 175oC

TJ = -55oC

150

120

90

60

, DRAIN CURRENT (A)

D

I

30

0

0 0.2 0.4 0.6 0.8 1

VGS = 10V

VGS = 4.5V

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 5. Transfer Ch aracteri stics Figure 6. Saturation Character istics

10

8

ID = 75A

6

, DRAIN TO SOURCE

ID = 24A

ON RESISTANCE (mΩ)

4

DS(ON)

r

2

246810

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

2

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

1.5

ON RESISTANCE

1

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 3.5V

VGS = 3V

TC = 25oC

VGS = 10V, ID =75A

Figure 7. Drain to Source On Resis tanc e vs Ga te

Voltage and Drain Current

1.4

1.2

1

0.8

0.6

NORMALIZED GATE

THRESHOLD VOLTAGE

0.4

0.2

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

Figure 9. Normalized Gate Thres hold Volta ge v s

Junction Temperature

Figure 8. Normalized Drain to Source On

Resistance vs Junction Temperature

1.2 ID = 250µA

1.1

1.0

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.9

-80 -40 0 40 80 120 160 200 , JUNCTION TEMPERATURE (oC)

T

J

Figure 10. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1

Fairchild Semiconductor ISL9N303AS3ST, ISL9N303AS3, ISL9N303AP3 Datasheet

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