Fairchild Semiconductor ISL9N302AS3ST Datasheet

April 2002

ISL9N302AS3ST

N-Channel Logic Level PWM Optimized UltraFET® Trench P ower MOSFETs

ISL9N302AS3ST

General Description

This device employs a new advanced trench MOSFET

Features

• Fast switching technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switchingfrequencies.

Applications

• DC/DC converters

DRAIN

(FLANGE)

GATE

SOURCE

•r

•Q

•C

=0.0019Ω (Typ), VGS=10V

DS(ON)

=0.0027Ω (Typ), VGS=4.5V

DS(ON)

(Typ) = 110nC, VGS=5V

g

(Typ) = 31nC

gd

(Typ) = 11000pF

ISS

G

D

S

TO-263AB

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

P

D

T

J,TSTG

Drainto SourceVoltage 30 V Gate to Source Voltage ±20 V DrainCurrent Continuous (T Continuous (T Continuous (T

=25oC, VGS=10V)

C

=100oC, VGS=4.5V) 75 A

C

=25oC, VGS=10V,R

C

Pulsed Figure 4 A Power dissipation

Derateabove 25

o

C

Operating and Storage Temperature -55 to 175

= 25°C unless otherwise noted

A

=43oC/W) 28 A

θJA

75 A

345

2.3

W

W/oC

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

ThermalResistanceJunction to Case TO-263 0.43 ThermalResistance Junctionto A mbient TO-263 62 ThermalResistance Junction to AmbientTO-263, 1in2copper pad area 43

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

N302AS ISL9N302AS3ST TO-263AB 330mm 24mm 800 units

o

C/W

o

C/W

o

C/W

Rev. B1,April 2002

ISL9N302AS3ST

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Chara cteristics

B I

DSS

I

GSS

VDSS

DraintoSourceBreakdownVoltage ID=250µA, VGS=0V 30 - - V

V

=25V - - 1

Zero Gate Voltage Drain Current

DS

=0V TC=150

V

GS

o

--250

Gate to Source LeakageCurrent VGS= ±20V - - ±100 nA

On Character istics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS=VDS,ID=250µA1-3V

I

=75A,VGS= 10V - 0.0019 0.0023

Drainto SourceOn Resistance

D

=75A,VGS= 4.5V - 0.0027 0.0033

I

D

Dynamic Cha racteri stic s

C

ISS

C

OSS

C

RSS

Q

g(TOT)

Q

g(5)

Q

g(TH)

Q

gs

Q

gd

Input Capacitance OutputCapacitance - 2000 - pF ReverseTransfer Capacitance - 900 - pF TotalGateChargeat10V VGS=0Vto10V TotalGateChargeat5V VGS=0Vto 5V - 110 165 nC Threshold Gate Charge VGS= 0V to 1V - 12 18 nC Gate to Source Gate Charge - 25 - nC Gate to Drain “Miller” Charge - 31 - nC

Switching Ch aracteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 29 - ns Rise Time - 120 - ns Turn-Off Delay Time - 45 - ns Fall Time - 34 - ns Turn-Off Time - - 119 ns

(VGS=4.5V)

=15V,VGS=0V,

V

DS

f=1MHz

V

=15V,ID=28A

DD

V

=4.5V,RGS=1.5Ω

GS

=15V

V

DD

I

=75A

D

I

=1.0mA

g

- 11000 - pF

200 300 nC

--224ns

µA

Ω

Switching Ch aracteristics (V

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 16 - ns Rise Time - 120 - ns Turn-Off Delay Time - 70 - ns Fall Time - 30 - ns Turn-Off Time - - 150 ns

GS

=10V)

V

=15V,ID=28A

DD

V

=10V,RGS=1.5Ω

GS

--204ns

Unclamped Inductive Switching

t

AV

Avalanche Time ID= 7.2A, L = 3.0mH 480 - - µs

Drain-Source Diode Characteristics

I

= 75A - - 1.25 V

V

SD

t

rr

Q

RR

Source to Drain Diode Voltage Reverse Recovery Time ISD=75A,dISD/dt = 100A/µs- - 42 ns

ReverseRecovered Charge ISD=75A,dISD/dt = 100A/µs- - 34 nC

SD

= 40A - - 1.0 V

I

SD

Typical Characteristic

ISL9N302AS3ST

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

TC, CASE TEMPERATURE (oC)

125

150

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

,NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01 10

-5

-4

10

SINGLE PULSE

-3

10

t, RECTANGULAR PULSE DURATION (s)

80

60

40

, DRAIN CURRENT (A)

20

D

I

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE(oC)

VGS=10V

VGS=4.5V

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

P

DM

t

1

t

NOTES: DUTY FACTOR: D = t PEAK TJ=PDMxZ

-2

10

-1

10

1/t2

θJCxRθJC+TC

0

10

2

10

1

Figure 3. Normalized Maximum Transient Thermal Impedance

5000

VGS=10V

1000

VGS=5V

, PEAK CURRENT (A)

DM

I

100

50

-5

10

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

-4

10

-3

10

t, PULSE WIDTH (s)

-2

10

TC=25oC

FOR TEMPERATURES ABOVE 25 CURRENT AS FOLLOWS:

I=I

25

-1

o

C DERATE PEAK

175 - T

C

150

0

10

1

10

Figure 4. Peak Current Capability

Typical Characteristic(Continued)

ISL9N302AS3ST

150

PULSE DURATION= 80µs DUTY CYCLE = 0.5% MAX

125

V

=15V

DD

100

75

50

, DRAIN CURRENT (A)

D

I

25

0

1.5 2.0 2.5 3.0 3.5

TJ=25oC

TJ=175oC

T

=-55oC

J

VGS, GATE TO SOURCE VOLTAGE (V)

150

125

100

75

50

, DRAIN CURRENT (A)

D

I

25

0

VGS=4.5V

VGS= 10V

0.5 1.0 1.5 2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS=3.5V

PULSE DURATION= 80µs DUTY CYCLE = 0.5% MAX

Figure 5. Transfer Characteristics Figure 6. Saturation Characteristics

10

, DRAIN TO SOURCE

ON RESISTANCE (mΩ)

DS(ON)

r

8

6

4

2

0

ID=75A

ID= 10A

246810

V

, GATE TO SOURCE VOLTAGE(V)

GS

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

1.8

PULSE DURATION= 80µs DUTY CYCLE = 0.5% MAX

1.6

1.4

1.2

1.0

ON RESISTANCE

0.8

NORMALIZED DRAIN TO SOURCE

0.6

-80 -40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

VGS=3V

TC=25oC

VGS= 10V, ID= 75A

Figure7. DraintoSourceOnResistancevsGate

Voltage and Drain Current

1.4

1.2

1.0

0.8

0.6

NORMALIZED GATE

THRESHOLD VOLTAGE

0.4

0.2

-80 -40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

VGS=VDS,ID= 250µA

Figure 9. Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 8. Normalized Drain to Source On

Resistance vs Junction Temperature

1.2 ID= 250µA

1.1

1.0

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.9

-80 -40 0 40 80 120 160 200

T

, JUNCTION TEMPERATURE(oC)

J

Figure 10. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

Fairchild Semiconductor ISL9N302AS3ST Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual