Fairchild Semiconductor ISL9N302AP3 Datasheet

±

θ

θ

ISL9N302AP3

January 2002

ISL9N302AP3

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs

General Description

This device employs a new advanced trench MOSFET

Features

• Fast switching
technology and features low gate charge while maintaining
low on-resistance.

Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.

Applications

• DC/DC converters

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

•r

•r

•Q

•Q

•C

= 0.0019 Ω (Typ), V

DS(ON)

= 0.0027 Ω (Typ), V

DS(ON)

(Typ) = 110nC, V

g

(Typ) = 31nC

gd

(Typ) = 11000pF

ISS

= 10V

GS

= 4.5V

GS

= 5V

GS

D

G

S

TO-220AB

MOSFET Maximum Ratings

T

= 25°C unless otherwise noted

A

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 30 V

Gate to Source Voltage

Drain Current

I

D

Continuous (T

Continuous (T

= 25

C

= 100

C

o

C, V

= 10V)

GS

o

C, V

= 4.5V) 75 A

GS

Pulsed Figure 4 A

P

D

T

, T

J

STG

Power dissipation
Derate above 25

o

C

Operating and Storage Temperature -55 to 175

20 V

75 A

345

2.3

W/

W

o

C

o

C

Thermal Characteristics

R

JC

R

JA

Thermal Resistance Junction to Case TO-220 0.43

Thermal Resistance Junction to Ambient TO-220 62

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

N302AP ISL9N302AP3 TO-220AB Tube N/A 50

©2002 Fairchild Semiconductor Corporation

o

C/W

o

C/W

Rev. B January 2002

µ

±

Ω

µ

T

Electrical Characteristics

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage I

Zero Gate Voltage Drain Current

Gate to Source Leakage Current V

= 250 µ A, V

D

V

= 25V - - 1

DS

V

= 0V T

GS

= ± 20V - -

GS

= 0V 30 - - V

GS

o

= 150

C

- - 250

100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage V

Drain to Source On Resistance

= V

GS

I

= 75A, V

D

I

= 75A, V

D

, I

= 250 µ A1-3V

DS

D

= 10V - 0.0019 0.0025

GS

= 4.5V - 0.0027 0.0033

GS

Dynamic Characteristics

C

C

C

Q

Q

Q

Q

Q

ISS

OSS

RSS

g(TOT)

g(5)

g(TH)

gs

gd

Input Capacitance

Output Capacitance - 2000 - pF

Reverse Transfer Capacitance - 900 - pF

Total Gate Charge at 10V V

Total Gate Charge at 5V V

Threshold Gate Charge V

Gate to Source Gate Charge - 25 - nC

V

= 15V, V

DS

f = 1MHz

= 0V to 10V

GS

= 0V to 5V - 110 165 nC

GS

= 0V to 1V - 12 18 nC

GS

GS

= 0V,

V

DD

I

D

I

g

= 15V

= 75A

= 1.0mA

- 11000 - pF

200 300 nC

Gate to Drain “Miller” Charge - 31 - nC

ISL9N302AP3

A

(V

(V

= 4.5V)

GS

= 10V)

GS

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time

Turn-On Delay Time - 29 - ns

Rise Time - 120 - ns

Turn-Off Delay Time - 45 - ns

Fall Time - 34 - ns

Turn-Off Time - - 119 ns

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time

Turn-On Delay Time - 16 - ns

Rise Time - 120 - ns

Turn-Off Delay Time - 70 - ns

Fall Time - 30 - ns

Turn-Off Time - - 150 ns

Unclamped Inductive Switching

t

AV

Avalanche Time I

Drain-Source Diode Characteristics

V

SD

t

rr

Q

RR

Source to Drain Diode Voltage

Reverse Recovery Time I

Reverse Recovered Charge I

- - 224 ns

V

DD

V

GS

= 15V, I
= 4.5V, R

= 28A

D

GS

= 1.5 Ω

- - 204 ns

V

= 15V, I

DD

V

= 10V, R

GS

= 7.2A, L = 3.0mH 480 - -

D

I

= 75A - - 1.25 V

SD

I

= 40A - - 1.0 V

SD

= 75A, dI

SD

= 75A, dI

SD

= 28A

D

= 1.5 Ω

GS

/dt = 100A/ µ s- - 42 ns

SD

/dt = 100A/ µ s- - 34 nC

SD

s

©2002 Fairchild Semiconductor Corporation Rev. B January 2002

ISL9N302AP3

Typical Characteristic

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

125

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

-4

10

SINGLE PULSE

10

80

60

40

, DRAIN CURRENT (A)

20

D

I

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Current vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

VGS = 10V

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-1

10

θJC

10

0

x R

2

θJC

VGS = 4.5V

t

1

t

2

+ T

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

5000

1000

VGS = 10V

VGS = 5V

, PEAK CURRENT (A)

DM

I

100

50

-5

10

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-4

10

-3

10

t, PULSE WIDTH (s)

-2

10

10

TC = 25oC

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

-1

o

C DERATE PEAK

25

0

10

175 - T

150

C

1

10

Figure 4. Peak Current Capability

©2002 Fairchild Semiconductor Corporation Rev. B January 2002