Fairchild Semiconductor ISL9N2357D3ST Datasheet

Data Sheet June 2002

ISL9N2357D3ST

30V, 0.007 Ohm, 35A, N-Channel
UltraFET

UltraFET® Trench from Fairchild is a new advanced
MOSFET technology that achieves the lowest possible on­resistance per silicon area while maintaining fast switching
and low gat e charge. The reduced c onduction and s wi tching
losses extend battery life in notebook PCs, cellular
telephones and other portable information appliances and
improve the overall efficiency of high frequency DC-DC
converters used to power the latest microprocessors.

®

Trench Power MOSFET

Packaging

ISL9N2357D3ST

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

UltraFET® Trench

Features

•r

•Q

•Q

•C

Symbol

Ordering Information

ISL9N2357D3ST TO-252AA N2357D

NOTE: When ordering, use the entire part number.
e.g., ISL9N2357D3ST.

= 0.006Ω Typical, V

DS(ON)

Total 85nC Typical, VGS = 10V

g

16nC Typical

gd

5600pF Typical

ISS

G

PART NUMBER PACKAGE BRAND

D

S

GS

= 10V

Absolute Maximum Ratings T

SYMBOL PARAMETER ISL9N2357D3ST UNITS

V

DSS

V

DGR

V

GS

I

D

I

D

I

DM

P

D

T

, T

J

STG

T

L

T

pkg

THERMAL SPECI FICATIONS

R

θJC

R

θJA

NOTE:

1. T

= 25oC to 150oC.

J

CAUTION: Stresses above those listed in “ Absolute M aximum Ratings” may cause perm anent damage to the device. This is a stre ss only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Drain to Source Voltage (Note 1) 30 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) 30 V
Gate to Source Voltage ±20 V
Drain Current

Continuous (T
Continuous (T
Pulsed Drain Current

Power Dissipation

Derate Above 25
Operating and Storage Temperature -55 to 175
Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief TB334

Thermal Resistance Junction to Case, TO-252 1.5
Thermal Resistance Junction to Ambient TO-252 100

= 25oC, Unless Otherwise Specified

C

= 25oC, VGS = 10V) (Figure 2)

C

= 100oC, VGS = 10V)

C

o

C

35
35

Figure 4

100

0.67

300
260

A
A
A

W

W/oC

o

C

o

C

o

C

o

C/W

o

C/W

©2002 Fairchild Semiconductor Corporation ISL9N2357D3ST Rev. B1

ISL9N2357D3ST

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source ON Resistance r
SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge at 20V Q
Total Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

DSS

GSS

GS(TH)VGS

DS(ON)ID

ON

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(10)

g(TH)

ISS

VDS = 25V, VGS = 0V - - 1 µA
V

DS

VGS = ±20V - - ±100 nA

VDD = 15V, ID = 20A
V

GS

R

GS

(Figures 14, 15)

r

f

VGS = 0V to 10V - 85 130 nC
VGS = 0V to 2V - 11 17 nC

gs
gd

VDS = 25V, VGS = 0V,
f = 1MHz

OSS

RSS

(Figure 10)

= 250µA, VGS = 0V (Figure 9) 30 - - V

= 25V, VGS = 0V, TC = 150oC - - 250 µA

= VDS, ID = 250µA (Figure 8) 2 - 4 V

= 35A, VGS = 10V (Figure 7) - 0.006 0.007 Ω

- - 144 ns

= 10V,

= 9.1Ω

-27-ns

-69-ns

-84-ns

-53-ns

- - 207 ns

= 0V to 20V VDD = 15V,

I

= 20A,

D

= 1.0mA

I

g(REF)

(Figures 11, 12, 13)

- 172 258 nC

-23-nC

-16-nC

- 5600 - pF

- 526 - pF

- 355 - pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

I

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

©2002 Fairchild Semiconductor Corporation ISL9N2357D3ST Rev. B1

SD

rr

RR

= 20A - - 1.25 V

SD

I

= 10A - - 1.0 V

SD

ISD = 20A, dISD/dt = 100A/µs--34ns
ISD = 20A, dISD/dt = 100A/µs--29nC

Typical Performance Curves

ISL9N2357D3ST

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

40

30

20

, DRAIN CURRENT (A)

10

D

I

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

1/t2

x R

0

θJC

+ T

1

t

2

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

2000

1000

VGS = 10V

100

TRANSCONDUCTANCE

, PEAK CURRENT (A)

DM

I

MAY LIMIT CURRENT
IN THIS REGION

10

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC
FOR TEMPERATURES

ABOVE 25
CURRENT AS FOLLOWS:

I = I

o

C DERATE PEAK

150 - T

25

0

10

125

C

10

FIGURE 4. PEAK CURRENT CAPABILITY

©2002 Fairchild Semiconductor Corporation ISL9N2357D3ST Rev. B1

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