Fairchild Semiconductor ISL9K8120P3 Datasheet
ISL9K8120P3
8A, 1200V Stealt h™ Dual Diode
ISL9K8120P3
May 2002
General Description
The ISL9K8120P3 is a Stealth™ dual diode optimized for low
loss performance i n high frequency hard s witched applica tions.
The Stealth™ family exhibits low reverse recovery current
(I
operating co nditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The lo w I
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49413
) and exceptionally soft recovery under typical
RM(REC)
and short ta phase reduce loss
RM(REC)
.
Features
• Soft Recover y . . . . . . . . . . . . . . . . . . . . . . . .tb / ta > 5.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package Symbol
JEDEC TO-220AB
ANODE 2
CATHODE
ANODE 1
CATHODE
(FLANGE)
K
< 32ns
rr
o
C
A
Device Maximum Ratings (per leg) T
= 25°C unless otherwise noted
C
A
1
Symbol Parameter Ratings Units
V
RRM
V
RWM
V
I
F(AV)
I
FRM
I
FSM
P
E
AVL
, T
T
J
T
T
PKG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
Repetitive Peak Reverse Voltage 1200 V
Working Peak Reverse Voltage 1200 V
DC Blocking Voltage 1200 V
R
Average Rectified Forw ard Current (TC = 105oC)
Total Device Current (Both Legs)
Repetitive Peak Surge Current (20kHz Square Wave) 16 A
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A
Power Dissipation 71 W
D
Avalanche Energy (1A, 40mH) 20 mJ
Operating and Storage Temperature Range -55 to 150 °C
STG
Maximum Temperature for Soldering
L
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
8
16
300
260
2
A
A
°C
°C
ISL9K8120P3 Rev. A
Package Marking and Ordering Information
Device Marking Device Package Tape Width Quantity
K8120P3 ISL9K8120P3 TO-220AB N/A 50
ISL9K8120P3
Electrical Characteristics (per leg)
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
I
Instantaneous Reverse Current VR = 1200V TC = 25°C - - 100 µA
R
T
= 125°C--1.0mA
C
On State Characteristics
V
Instantaneous Forward Voltage IF = 8A TC = 25°C-2.83.3V
F
= 125°C-2.73.1V
T
C
Dynamic Characteristics
C
Junction Capacitance VR = 10V, IF = 0A - 30 - pF
J
Switching Characteristics
t
Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 25 32 ns
rr
Reverse Recovery Time IF = 8A,
t
rr
I
RM(REC)
Q
Maximum Reverse Recovery Current - 4.3 - A
Reverse Recovered Charge - 525 - nC
RR
t
Reverse Recovery Time IF = 8A,
rr
S Softness Factor (t
I
RM(REC)
Q
Maximum Reverse Recovery Current - 5.5 - A
Reverse Recovered Charge - 1.1 - µC
RR
Reverse Recovery Time IF = 8A,
t
rr
S Softness Factor (t
I
RM(REC)
Q
dI
Maximum Reverse Recovery Current - 11 - A
Reverse Recovered Charge - 1.2 - µC
RR
/dt Maximum di/dt during t
M
)-9--
b/ta
)-5.5--
b/ta
b
= 8A, dIF/dt = 100A/µs, VR = 30V - 35 44 ns
I
F
- 300 - ns
/dt = 200A/µs,
dI
F
V
= 780V, TC = 25°C
R
- 375 - ns
/dt = 200A/µs,
dI
F
V
= 780V,
R
= 125°C
T
C
- 200 - ns
/dt = 1000A/µs,
dI
F
V
= 780V,
R
= 125°C
T
C
- 310 - A/µs
Thermal Characteristics
R
R
©2002 Fairchild Semiconductor Corporation ISL9K8120P3 Rev. A
Thermal Resistance Junction to Case TO-220 - - 1.75 °C/W
θJC
Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W
θJA
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