Fairchild Semiconductor ISL9K460P3 Datasheet
ISL9K460P3
4A, 600V Stealth™ Dual Diode
ISL9K460P3
July 2003
General Description
The ISL9K460P3 is a Stealth™ dual diode optimized
for low loss performance in high frequency hard
switched applications. The Stealth™ family exhibits low
reverse recovery cu rrent (I
recovery under typical opera tin g conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I
reduce loss in switching transistor s. The so f t recover y
minimizes ringing, expanding the rang e of con di tions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth™ diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
) and exceptionally soft
RRM
and short ta phase
RRM
Features
• Soft Recover y . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 3
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Formerly developmental type TA49408.
Package Symbol
JEDEC TO-220AB
ANODE 2
CATHODE
(FLANGE)
CATHODE
ANODE 1
A
< 20ns
rr
o
C
K
A
1
2
Device Maximum Ratings (per leg) T
= 25°C unless otherwise noted
C
Symbol Parameter Ratings Units
V
RRM
V
RWM
V
I
F(AV)
Peak Repetitive Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
R
Average Rectified Forw ard Current (TC = 155°C) 4 A
Total Device Current (Both Legs) 8 A
I
FRM
I
FSM
P
E
AVL
, T
T
J
T
T
PKG
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2003 Fairchild Semiconductor Corporation
Repetitive Peak Surge Current (20kHz Square Wave) 8 A
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 50 A
Power Dissipation 58 W
D
Avalanche Energy (0.5A, 80mH) 10 mJ
Operating and Storage Temperature Range -55 to 175 °C
STG
Maximum Temperature for Soldering
L
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
°C
°C
ISL9K460P3 Rev. B2
Package Marking and Ordering Information
Device Marking Device Package Tape Width Quantity
K460P3 ISL9K460P3 TO-220AC N/A 50
ISL9K460P3
Electrical Characteristics
(per leg) T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
I
Instantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA
R
T
= 125°C - - 1.0 mA
C
On State Characteristics
V
Instantaneous Forward Voltage IF = 4A TC = 25°C - 2.0 2.4 V
F
= 125°C - 1.6 2.0 V
T
C
Dynamic Characteristics
C
Junction Capacitance VR = 10V, IF = 0A - 19 - pF
J
Switching Characteristics
t
Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 17 20 ns
rr
Reverse Recovery Time IF = 4A,
t
rr
I
Q
Maximum Reverse Recovery Current - 2.6 - A
RRM
Reverse Recovery Charge - 22 - nC
RR
t
Reverse Recovery Time IF = 4A,
rr
S Softness Factor (t
I
Q
Maximum Reverse Recovery Current - 2.8 - A
RRM
Reverse Recovery Charge - 100 - nC
RR
Reverse Recovery Time IF = 4A,
t
rr
S Softness Factor (t
I
Q
dI
Maximum Reverse Recovery Current - 4.3 - A
RRM
Reverse Recovery Charge 110 - nC
RR
/dt Maximum di/dt during t
M
)-4.2-
b/ta
)-3.5-
b/ta
b
= 4A, dIF/dt = 100A/µs, VR = 30V - 19 22 ns
I
F
-17-ns
/dt = 200A/µs,
d
IF
V
= 390V, TC = 25°C
R
-77-ns
/dt = 200A/µs,
d
IF
V
= 390V,
R
= 125°C
T
C
-54-ns
/dt = 400A/µs,
d
IF
V
= 390V,
R
= 125°C
T
C
- 500 - A/µs
Thermal Characteristics
R
R
©2003 Fairchild Semiconductor Corporation ISL9K460P3 Rev. B2
Thermal Resistance Junction to Case - - 2.6 °C/W
θJC
Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W
θJA
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