Fairchild Semiconductor ISL9K3060G3 Datasheet
ISL9K3060G3
30A, 600V Stealt h™ Dual Diode
ISL9K3060G3
May 2002
General Description
The ISL9K3060G3 is a Stealth™ dual diode optimized for low
loss performance i n high frequency hard s witched applica tions.
The Stealth™ family exhibits low reverse recovery current
(I
operating co nditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The lo w I
in switching transistors. The soft recovery minimize s ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealt h™ diode with an SMPS IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49411
) and exceptionally soft recovery under typical
RM(REC)
and short ta phase reduce loss
RM(REC)
.
Features
• Soft Recover y . . . . . . . . . . . . . . . . . . . . . . . .tb / ta > 1.2
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package Symbol
JEDEC STYLE TO-247
K
CATHODE
(BOTTOM SIDE
METAL)
ANODE 2
CATHODE
ANODE 1
< 35ns
rr
o
C
A1
Device Maximum Ratings (per leg) T
= 25°C unless otherwise noted
C
Symbol Parameter Ratings Units
V
RRM
V
RWM
V
I
F(AV)
I
FRM
I
FSM
P
E
AVL
, T
T
J
T
T
PKG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
Repetitive Peak Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
R
Average Rectified Forw ard Current (TC = 125oC)
Total Device Current (Both Legs)
Repetitive Peak Surge Current (20kHz Square Wave) 70 A
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 325 A
Power Dissipation 200 W
D
Avalanche Energy (1A, 40mH) 20 mJ
Operating and Storage Temperature Range -55 to 175 °C
STG
Maximum Temperature for Soldering
L
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
30
60
300
260
ISL9K3060G3 Rev. C
A2
A
A
°C
°C
Package Marking and Ordering Information
Device Marking Device Package Tape Width Quantity
K3060G3 ISL9K3060G3 TO-247 - -
T
Electrical Characteristics (per leg)
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
I
Instantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA
R
On State Characteristics
V
Instantaneous Forward Voltage IF = 30A TC = 25°C-2.12.4V
F
Dynamic Characteristics
C
Junction Capacitance VR = 10V, IF = 0A - 120 - pF
J
Switching Characteristics
t
Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 27 35 ns
rr
t
Reverse Recovery Time IF = 30A,
rr
I
RM(REC)
Q
I
RM(REC)
Q
I
RM(REC)
Q
dI
Maximum Reverse Recovery Current - 2.9 - A
Reverse Recovered Charge - 55 - nC
RR
t
Reverse Recovery Time IF = 30A,
rr
S Softness Factor (t
)-1.9-
b/ta
Maximum Reverse Recovery Current - 6 - A
Reverse Recovered Charge - 450 - nC
RR
Reverse Recovery Time IF = 30A,
t
rr
S Softness Factor (t
) - 1.25 -
b/ta
Maximum Reverse Recovery Current - 21 - A
Reverse Recovered Charge 730 - nC
RR
/dt Maximum di/dt during t
M
b
= 25°C unless otherwise noted
C
= 125°C--1.0mA
T
C
T
= 125°C-1.72.1V
C
= 30A, dIF/dt = 100A/µs, VR = 30V - 36 45 ns
I
F
-36-ns
/dt = 200A/µs,
dI
F
= 390V, TC = 25°C
V
R
- 110 - ns
/dt = 200A/µs,
dI
F
= 390V,
V
R
T
= 125°C
C
-60-ns
/dt = 1000A/µs,
dI
F
= 390V,
V
R
T
= 125°C
C
- 800 - A/µs
ISL9K3060G3
Thermal Characteristics
R
R
1560©2002 Fairchild Semiconductor Corporation ISL9K3060G3 Rev. C
Thermal Resistance Junction to Case - - 1.0 °C/W
θJC
Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W
θJA
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