Fairchild Semiconductor ISL9K1560G3 Datasheet
ISL9K1560G3
15A, 600V Stealt h™ Dual Diode
ISL9K1560G3
November 2002
General Description
The ISL9K1560G3 is a Stealth™ dual diode optimized for low
loss performance i n high frequency hard s witched applica tions.
The Stealth™ family exhibits low reverse recovery current
(I
operating co nditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The lo w I
in switching transistors. The soft recovery minimize s ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealt h™ diode with an SMPS IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49410
) and exceptionally soft recovery under typical
RM(REC)
and short ta phase reduce loss
RM(REC)
.
Features
• Soft Recover y . . . . . . . . . . . . . . . . . . . . . . . .tb / ta > 1.2
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package Symbol
JEDEC STYLE TO-247
K
CATHODE
(BOTTOM SIDE
METAL)
ANODE 2
CATHODE
ANODE 1
< 30ns
rr
o
C
A1
Device Maximum Ratings (per leg) T
= 25°C unless otherwise noted
C
Symbol Parameter Ratings Units
V
RRM
V
RWM
V
I
F(AV)
I
FRM
I
FSM
P
E
AVL
, T
T
J
T
T
PKG
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
Repetitive Peak Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
R
Average Rectified Forw ard Current (TC = 145oC)
Total Device Current (Both Legs)
Repetitive Peak Surge Current (20kHz Square Wave) 30 A
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 200 A
Power Dissipation 150 W
D
Avalanche Energy (1A, 40mH) 20 mJ
Operating and Storage Temperature Range -55 to 175 °C
STG
Maximum Temperature for Soldering
L
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
15
30
300
260
A2
A
A
°C
°C
ISL9K1560G3 Rev. C1
Package Marking and Ordering Information
Device Marking Device Package Tape Width Quantity
K1560G3 ISL9K1560G3 TO-247 N/A 30
ISL9K1560G3
Electrical Characteristics (
per leg) T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
I
Instantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA
R
= 125°C--1.0mA
T
C
On State Characteristics
V
Instantaneous Forward Voltage IF = 15A TC = 25°C-1.82.2V
F
T
= 125°C - 1.65 2.0 V
C
Dynamic Characteristics
C
Junction Capacitance VR = 10V, IF = 0A - 62 - pF
J
Switching Characteristics
t
Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 25 30 ns
rr
= 15A, dIF/dt = 100A/µs, VR = 30V - 35 40 ns
I
F
t
Reverse Recovery Time IF = 15A,
rr
I
RM(REC)
Q
Maximum Reverse Recovery Current - 3.5 - A
Reverse Recovered Charge - 57 - nC
RR
t
Reverse Recovery Time IF = 15A,
rr
S Softness Factor (t
I
RM(REC)
Q
Maximum Reverse Recovery Current - 5.0 - A
Reverse Recovered Charge - 275 - nC
RR
Reverse Recovery Time IF = 15A,
t
rr
S Softness Factor (t
I
RM(REC)
Q
dI
Maximum Reverse Recovery Current - 13.5 - A
Reverse Recovered Charge - 390 - nC
RR
/dt Maximum di/dt during t
M
/dt = 200A/µs,
dI
F
= 390V, TC = 25°C
V
R
/dt = 200A/µs,
dI
)-2.0-
b/ta
) - 1.36 -
b/ta
b
F
= 390V,
V
R
T
= 125°C
C
/dt = 800A/µs,
dI
F
= 390V,
V
R
T
= 125°C
C
- 29.4 - ns
-90-ns
-52-ns
- 800 - A/µs
Thermal Characteristics
R
R
©2002 Fairchild Semiconductor Corporation ISL9K1560G 3 Rev. C1
Thermal Resistance Junction to Case - - 1.0 °C/W
θJC
Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W
θJA
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