Fairchild Semiconductor IRLS640A Datasheet

Advanced Power MOSFET

IRLS640A

FEATURES

! Logic-Level Gate Drive
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 μA (Max.) @ VDS= 200V
! Lower R

: 0.145Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed

=25℃)

C

=100℃)

C

①

Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt

②

①

①

③

Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂ from case for 5-seconds

T

V

DSS

I

I

DM

V
E

I

AR

E

dv/dt

P

, T

J

T

D

GS
AS

AR

D

STG

L

BV

DSS

R

DS(on)

ID= 9.8 A

TO-220F

1

2

3

1.Gate 2. Drain 3. Source

200

9.8

6.2
63

±20

64
18

4.0

5

40

0.32

- 55 to +150

300

= 200 V

= 0.18 Ω

V
A
A

V

mJ

A

mJ

V/ns

W

W/℃

℃

Thermal Resistance

R

θJC

R

θJA

Characteristic Max. UnitsSymbol

Junction-to-Case

Junction-to-Ambient

Typ.

--

--

3.13

62.5

o

C/W

Rev. A

IRLS640A

N-CHANNEL

POWER MOSFET

Electrical Characteristics

CharacteristicSymbol

BV

ΔBV/ΔT

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

C

C

t

d(on)

t

d(off)

Q
Q
Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source
On-State Resistance
Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(“Miller”) Charge

gd

(TC=25℃ unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

200

--

1.0

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

0.17

--

--

--

--

--

--

13.3

1310

200

95
11

8
46
15
40

6.8

18.6

--

--

2.0

100

-100
10

100

0.18

--

1705

250
120

30
25

100

40
56

--

--

V

V/℃

V

nA

μA

Ω

S

pF

ns

nC

=0V,ID=250μA

GS

I

=250μA See Fig 7

D

V

DS=VGS

V

=20V

GS

V

=-20V

GS

VDS=200V
V

=160V,TC=125℃

DS

V

=5V,ID=4.9A

GS

VDS=40V,ID=4.9A
VGS=0V,VDS=25V,f =1MHz

VDD=100V,ID=18A,
R

=4.6Ω

G

VDS=160V,VGS=5V,
I

=18A

D

See Fig 6 & Fig 12

, ID=250μA

See Fig 5

See Fig 13

④

④

④⑤

④⑤

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

I

SM

V

t

Q

Notes ;

① Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature
② L=1mH, I
③ I

④ Pulse Test : Pulse Width = 250μs, Duty Cycl e ≤ 2%
⑤ Essentially Independent of Operating Temperature

Continuous Source Current

S

Pulsed-Source Current
Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=9.8A, VDD=50V, RG=27Ω, Starting TJ =25℃

AS

≤18A, di/dt≤260A/μs, VDD≤BV

SD

①

④

, Starting TJ =25℃

DSS

--

--

--

--

-­224

--

1.55

--

63

1.5

--

--

ns

μ

A

V

C

18

--

Integral reverse pn-diode
in the MOSFET
T

=25℃,IS=9.8A,VGS=0V

J

T

=25℃,IF=18A

J

di

/dt=100A/μs

F

④

N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 7 .0 V
6 .0 V
5 .5 V
5 .0 V
4 .5 V

1

4 .0 V

10

3 .5 V
Bo tto m : 3 .0 V

, Drain Current [A ]

D

I

0

10

-1

10

VDS , Drain-Source Voltage [V]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

IRLS640A

1

10

150 oC

0

10

25 oC

, Drain Current [A ]

D

I

-1

1

10

10

0246810

- 55 oC

VGS , Gate-Source Vo ltage [V]

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= 40 V

DS

s Pulse Test

µ

0.4

]

Ω

, [

DS(on)

R

0.3

0.2

0.1

VGS = 5 V

VGS = 10 V

Drain-Source On-Resist ance

@ Note : TJ = 25 oC

0.0
020406080

2000

C

1600

ID , Drain Current [A]

iss

C

= Cgs+ Cgd ( Cds= shorted )

iss

= Cds+ C

C

oss

gd

C

= C

rss

gd

1200

C

oss

Capacitance [pF]

800

C

rss

400

0

0

10

10

@ Notes :

1. V

= 0 V

GS

2. f = 1 MHz

1

VDS , Drain-Source Voltag e [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

, Reverse Drain C urrent [A]

150 oC

DR

I

10

25 oC

-1

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

@ Notes :

1. V

2. 250

= 0 V

GS

s Pulse Test

µ

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

6

4

2

, Gate-Source Vo ltage [V]

GS

V

0

0 10203040

VDS = 40 V

VDS = 100 V

VDS = 160 V

@ Notes : ID = 18 A

QG , Total Gate Char ge [nC]