Fairchild Semiconductor IRLS520A Datasheet

Advanced Power MOSFET

IRLS520A

FEATURES

n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 μA (Max.) @ V
n Lower R

: 0.176Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T

=25℃)

C

=100℃)

C

Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂ from case for 5-seconds

T

V

DSS

I

I

DM

V
E

I

AR

E

dv/dt

P

, T

J

T

D

GS
AS

AR

D

STG

L

DS

= 100V

①

②

①

①

③

BV

DSS

R

DS(on)

ID= 7.2 A

TO-220F

1

2

3

1.Gate 2. Drain 3. Source

100

7.2
5

32

±20

103

7.2

3.0

6.5

30

0.2

- 55 to +175

300

= 100 V

= 0.22Ω

V
A
A

V

mJ

A

mJ

V/ns

W

W/℃

℃

Thermal Resistance

R

θJC

R

θJA

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Junction-to-Ambient

--

--

5

62.5

o

C/W

Rev. A

IRLS520A

N-CHANNEL

POWER MOSFET

Electrical Characteristics

CharacteristicSymbol

BV

ΔBV/ΔT

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

C

C

t

d(on)

t

d(off)

Q
Q
Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source
On-State Resistance
Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(“Miller”) Charge

gd

(TC=25°C unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

100

--

1.0

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

0.1

--

--

--

--

--

--

7.7

340

90
39

5
10
19

9

10.2

1.7

6.0

--

--

2.0

100

-100
10

100

0.22

-­440
115

50
20
30
50
30
15

--

--

V

V/℃

V

nA

μA

Ω

S

pF

ns

nC

=0V,ID=250 µ A

GS

I

=250μA See Fig 7

D

V

DS=VGS

V

=20V

GS

V

=-20V

GS

VDS=100V
V

=80V,TC=150°C

DS

=5V,ID=3.6A

V

GS

VDS=40V,ID=3.6A
VGS=0V,VDS=25V,f =1MHz

VDD=50V,ID=9.2A,
R

=9Ω

G

See Fig 13

VDS=80V,VGS=5V,
I

=9.2A

D

See Fig 6 & Fig 12

, ID=250µA

④

④

See Fig 5

④⑤

④⑤

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

I

SM

V

t

Q

Notes ;

① Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature
② L=3mH, I
③ I
④ Pulse Test : Pulse Width = 250µs, Duty Cycle <
⑤ Essentially Independent of Operating Temperature

Continuous Source Current

S

Pulsed-Source Current ①
Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=7.2A, VDD=25V, RG=27Ω, Starting TJ =25 °C

AS

< 9.2A, di/dt < 300A/µs, V

SD

DD

< BV

, Starting TJ =25 °C

DSS

④

2%

--

--

--

--

-­98

--

0.34

--

32

1.5

--

--

A

V
ns
µC

9.2

--

Integral reverse pn-diode
in the MOSFET
T

=25°C,IS=7.2A,VGS=0V

J

T

=25°C,IF=7.2A

J

di

/dt=100A/µ s

F

④

N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 7 .0 V
6 .0 V
5 .5 V

1

10

5 .0 V
4 .5 V
4 .0 V
3 .5 V
Bo tto m : 3 .0 V

0

10

, Drain Current [A ]

D

I

-1

10

-1

10

VDS , Drain-Source Voltage [V]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

IRLS520A

1

10

175 oC

0

10

25 oC

, Drain Current [A ]

D

I

-1

1

10

10

0246810

- 55 oC

VGS , Gate-Source Vo ltage [V]

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= 40 V

DS

s Pulse Test

µ

0.4

]

Ω

, [

DS(on)

R

0.3

0.2

0.1

Drain-Source On-Resistance

VGS = 5 V

VGS = 10 V

@ Note : TJ = 25 oC

0.0
0 10203040

ID , Drain Current [A ]

600

C

480

360

iss

C

oss

240

Capacitance [pF]

C

rss

120

0

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

= Cds+ C

C

oss

gd

C

= C

rss

gd

1

10

@ Notes :

1. V

= 0 V

GS

2. f = 1 MHz

VDS , Drain-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

, Reverse Drain C urrent [A]

175 oC

DR

I

10

25 oC

-1

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

@ Notes :

1. V

2. 250

= 0 V

GS

s Pulse Test

µ

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

6

4

2

, Gate-Source Vo ltage [V]

GS

V

0

024681012

VDS = 20 V

VDS = 50 V

VDS = 80 V

@ Notes : ID = 9.2 A

QG , Total Gate Char ge [nC]