Fairchild Semiconductor IRLS510A Datasheet
Advanced Power MOSFET
IRLS510A
FEATURES
n Logic-Level Gate Drive
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 A (Max.) @ V
n Lower R
: 0.336 (Typ.)
DS(ON)
Ω
µ
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
=25 )
C
=100 )
C
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
=25 )
C
o
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂ from case for 5-seconds
T
V
DSS
I
I
DM
V
E
I
AR
E
dv/dt
P
, T
J
T
D
GS
AS
AR
D
STG
L
C
DS
o
C
o
C
= 100V
1
O
2
O
1
O
1
O
3
O
BV
DSS
R
DS(on)
ID= 4.5 A
-220F
TO
1
2
3
1.Gate 2. Drain 3. Source
100
4.5
3.1
20
+
_
20
54
4.5
2.3
6.5
23
0.15
- 55 to +175
300
= 100 V
= 0.44
V/ns
W/
Ω
V
A
A
V
mJ
A
mJ
W
o
C
o
C
Thermal Resistance
R
θJC
R
θJA
Characteristic Max. UnitsSymbol Typ.
Junction-to-Case
Junction-to-Ambient
--
--
6.5
62.5
o
C/W
Rev. A
IRLS510A
Electrical Characteristics
o
(TC=25 unless otherwise specified)
C
N-CHANNEL
POWER MOSFET
BV
DSS
BV/ T
∆∆
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
CharacteristicSymbol
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
100
--
1.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Max. UnitsTyp.Min. Test Condition
V
--
0.1
--
--
--
--
--
--
3.2
180
50
20
8
10
17
8
5.5
0.9
3.5
--
--
2.0
100
-100
10
100
0.44
--
235
65
25
25
30
45
25
8
--
--
V
V/oC
V
nA
µ
A
Ω
S
pF
ns
nC
=0V,ID=250 A
GS
µ
I
=250 A See Fig 7
D
V
DS=VGS
V
=20V
GS
V
=-20V
GS
VDS=100V
V
=80V, TC=150oC
DS
=5V,ID=2.25A
V
GS
VDS=40V,ID=2.25A
VGS=0V,VDS=25V,f =1MHz
See Fig 5
=50V,ID=5.6A,
V
DD
R
=12Ω
G
See Fig 13
V
=80V,VGS=5V,
DS
I
=5.6A
D
See Fig 6 & Fig 12
µ
, ID=250µA
4
O
4
O
O4O
O4O
5
5
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes ;
Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature
1
O
2
L=4mH, I
O
I
3
SD
O
Pulse Test : Pulse Width = 250µs, Duty Cycle <
4
O
Essentially Independent of Operating Temperature
5
O
Continuous Source Current
S
Pulsed-Source Current
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
=4.5A, VDD=25V, RG=27Ω, Starting TJ =25oC
AS
< 5.6A, di/dt < 250A/µs, V
DD
< BV
DSS
--
1
--
O
4
--
O
--
--
, Starting TJ =25oC
2%
--
--
--
85
0.23
5.6
20
1.5
--
--
Integral reverse pn-diode
A
in the MOSFET
o
C
T
=25 ,IS=4.5A,VGS=0V
J
o
T
=25 ,IF=5.6A
C
J
di
/dt=100A/ s
F
µ
V
ns
C
µ
O
4
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
V
GS
Top : 7 .0 V
1
10
6 .0 V
5 .5 V
5 .0 V
4 .5 V
4 .0 V
3 .5 V
Bo tto m : 3 .0 V
0
10
, Drain Current [A ]
D
I
-1
10
-1
10
VDS , Drain-Source Voltage [V]
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
0
10
IRLS510A
1
10
175 oC
0
10
25 oC
, Drain Current [A ]
D
I
-1
1
10
10
0246810
- 55 oC
VGS , Gate-Source Vo ltage [V]
@ Notes :
1. V
2. V
3. 250
= 0 V
GS
= 40 V
DS
s Pulse Test
µ
0.8
VGS = 5 V
VGS = 10 V
]
Ω
, [
DS(on)
R
0.6
0.4
0.2
Drain-Source On-Resistance
@ Note : TJ = 25 oC
0.0
0 5 10 15 20
ID , Drain Current [A ]
350
280
C
iss
210
C
oss
140
Capacitance [pF]
C
rss
70
0
0
10
C
= Cgs+ Cgd ( Cds= shorted )
iss
= Cds+ C
C
oss
gd
C
= C
rss
gd
1
10
VDS , Drain-Source Voltage [V]
@ Notes :
1. V
= 0 V
GS
2. f = 1 MHz
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
1
10
0
10
, Reverse Drain C urrent [A]
175 oC
DR
I
-1
10
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
25 oC
@ Notes :
1. V
2. 250
= 0 V
GS
s Pulse Test
µ
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
6
4
2
, Gate-Source Vo ltage [V]
GS
V
0
0246
VDS = 20 V
VDS = 50 V
VDS = 80 V
@ Notes : ID = 5.6 A
QG , Total Gate Char ge [nC]
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