Fairchild Semiconductor IRLU110A, IRLR110A Datasheet
$GYDQF HG 3RZH U 026)(7
IRLR/U110A
FEATURES
Avalanche Rugged Technology
♦
Rugged Gate Oxide Technology
♦
Lower Input Capacitance
♦
Improved Gate Charge
♦
Extended Safe Operating Area
♦
Lower Leakage Current: 10µA (Max.) @ V
♦
Lower R
♦
: 0.336Ω (Typ.)
DS(ON)
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Volta ge
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25°C)
Total Power Dissipation (T
Linear Derating Factor
Operating Juncti on and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8
from case for 5-seconds
T
V
DSS
I
D
I
DM
V
E
I
AR
E
dv/dt
P
, T
J
T
GS
AS
AR
D
STG
L
DS
=25°C)
C
=100°C)
C
=25°C)
C
= 100V
*
(3)
(1)
(2)
(1)
(1)
BV
DSS
R
DS(on)
ID = 4.7 A
D-PAK
1
3
1. Gate 2. Drain 3. Source
100
4.7
3
16
20
±
58
4.7
2.2
6.5
2.5
22
0.18
- 55 to +150
300
= 100 V
= 0.44Ω
I-PAK
2
1
2
3
V/ns
W/°C
V
A
A
V
mJ
A
mJ
W
W
°C
Thermal Resistance
Characteristic Max. UnitsSymbol Typ.
R
JC
θ
R
θJA
R
θJA
When mounted on the minimum pad size recommended (PCB Mount).
*
©1999 Fairchild Semiconductor Corpor ation
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
*
--
--
--
5.6
50
110
°C/W
Rev. B
1
IRLR/U110A
1&+$11(/
32:(5 026)(7
Electrical Characteristics
CharacteristicSymbol
BV
∆BV/∆T
V
R
DSS
GS(th)
I
GSS
I
DSS
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
Q
gs
Q
gd
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forwar d
Gate-Source Leakage , Revers e
Drain-to-Sou rce Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
g
Gate-Source Charge
Gate-Drain (
Miller ) Charge
(TC=25°C unless otherwise specified)
Max. UnitsTyp.Min. Test Condition
V
100
--
1.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.1
--
--
--
--
--
--
3.2
180
50
20
8
10
17
8
5.5
0.9
3.5
--
--
2.0
100
-100
10
100
0.44
--
235
65
25
25
30
45
25
8
--
--
V
V/°C
V
nA
A
µ
Ω
pF
ns
nC
=0V,ID=250µA
GS
I
=250µA
D
VDS=5V,ID=250µA
V
=20V
GS
V
=-20V
GS
V
=100V
DS
V
=80V,TC=125°C
DS
=5V,ID=2.35A
V
GS
Ω
VDS=40V,ID=2.35A
V
=0V,VDS=25V,f =1MHz
GS
See Fig 5
VDD=50V,ID=5.6A,
R
=12
G
VDS=80V,VGS=5V,
=5.6A
I
D
See Fig 6 & Fig 12
See Fig 7
Ω
See Fig 13
(4)
(4)
(4) (5)
(4) (5)
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes;
(1) Repetitive Rating: Pu lse Width Limited by Maximum Junction Temperatu re
(2) L=4mH, I
(3) I
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temper ature
Continuous Source Current
S
Pulsed- S o u rce Curren t
Diode Forward Voltage
SD
Reverse Recove ry T ime
rr
Reverse Recovery Ch arge
rr
=4.7A, VDD=25V, RG=27Ω, Starting TJ =25°C
AS
5.6A, di/dt ≤ 250A/µs, V
≤
SD
DD
≤
BV
DSS
--
(1)
--
(4)
--
--
--
, Starting TJ =25°C
--
--
--
85
0.23
4.7
16
1.5
--
--
ns
µ
A
V
C
Integral reverse pn-diode
in the MOSFET
T
=25°C,IS=4.7A,VGS=0V
J
T
=25°C,IF=5.6A
J
/dt=100A/µs
di
F
(4)
2
1&+$11(/
32:(5 026)(7
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
V
GS
Top : 7.0 V
1
10
6 .0 V
5 .5 V
5 .0 V
4 .5 V
4 .0 V
3 .5 V
Bottom : 3 .0 V
0
10
, Drain C urrent [A]
D
I
-1
10
-1
10
VDS , Drain-S ource Voltage [V]
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
0
10
IRLR/U110A
1
10
150 oC
0
10
25 oC
, Drain C urrent [A]
D
I
-1
1
10
10
0246810
- 55 oC
VGS , Gate-So urce Voltage [V]
@ Notes :
1. V
GS
2. V
DS
3. 250
= 0 V
= 40 V
s Pulse Test
µ
0.8
VGS = 5 V
VGS = 10 V
]
Ω
, [
DS(on)
R
0.6
0.4
0.2
Drain-Sour ce On-Resistance
0.0
0 5 10 15 20
350
280
C
210
C
ID , Drain C urrent [A]
iss
oss
C
= Cgs+ Cgd ( Cds= shorted )
iss
C
= Cds+ C
oss
gd
C
= C
rss
gd
140
Capacitanc e [pF]
C
rss
70
0
0
10
1
10
VDS , Drain-S ource Voltage [V]
@ Note : TJ = 25 oC
@ Notes :
1. V
= 0 V
GS
2. f = 1 MHz
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Curr ent
1
10
0
10
, Reverse Drain Current [A]
150 oC
DR
I
-1
10
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
25 oC
@ Notes :
1. V
GS
2. 250
= 0 V
s Pulse Test
µ
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Sour ce Voltage
6
4
2
, Gate-Source Voltage [V]
GS
V
0
0246
QG , Total Gate Charge [nC]
VDS = 20 V
VDS = 50 V
VDS = 80 V
@ Notes : ID = 5.6 A
3
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