Fairchild Semiconductor IRLM210A Datasheet
Advanced Power MOSFET
IRLM210A
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 µA(Max.) @ V
n Lower R
: 1.185 Ω (Typ.)
DS(ON)
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
=25oC)
A
=70oC)
A
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
*
=25oC)
A
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂ from case for 5-seconds
T
V
I
V
E
I
E
dv/dt
P
, T
J
T
DSS
I
DM
AR
D
GS
AS
AR
D
STG
L
DS
*
= 200V
①
②
①
①
③
BV
DSS
R
DS(on)
ID= 0.77 A
SOT-223
1
1. Gate 2. Drain 3. Source
200
0.77
0.62
6.1
±20
27
0.77
0.18
5.0
1.8
0.014
- 55 to +150
300
= 200 V
= 1.5 Ω
2
3
V/ns
W/
V
A
A
V
mJ
A
mJ
W
o
C
o
C
Thermal Resistance
Characteristic Max. UnitsSymbol Typ.
R
θJA
*
When mounted on the mi nimum pad size recommended (PCB Mount).
Junction-to-Ambient
*
69.4--
o
C/W
Rev. A
IRLM210A
N-CHANNEL
POWER MOSFET
Electrical Characteristics
CharacteristicSymbol
BV
∆BV/∆T
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
fs
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Turn-On Delay Time
t
Rise Time
r
Turn-Off Delay Time
t
Fall Time
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain(＂Miller＂) Charge
gd
(TC=25oC unless otherwise specified)
Max. UnitsTyp.Min. Test Condition
V
200
--
1.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.19
--
--
--
--
--
--
1.8
185
35
14
9
9
20
6
6.1
1.4
2.8
--
--
2.0
100
-100
10
100
1.5
--
240
45
20
30
30
50
20
9
--
--
V
V/oC
V
nA
µA
Ω
pF
ns
nC
=0V,ID=250µA
GS
I
=250µA See Fig 7
D
V
=5V,ID=250µA
DS
V
=20V
GS
V
=--20V
GS
VDS=200V
V
=160V,TC=125oC
DS
=5V,ID=0.39A
V
GS
Ω
VDS=40V,ID=0.39A
VGS=0V,VDS=25V,f =1MHz
VDD=100V,ID=3.3A,
R
=22Ω
G
See Fig 13
VDS=160V,VGS=5V,
I
=3.3A
D
See Fig 6 & Fig 12
④
④
See Fig 5
④⑤
④⑤
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Tem perature
② L=70mH, I
③ I
④ Pulse Test : Pulse Width = 250µs, Duty Cyc l e ≤ 2%
⑤ Essentially Independent of Operating Temperature
Continuous Source Current
S
Pulsed-Source Current
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
=0.77A, VDD=50V, RG=27Ω, Starting TJ =25oC
AS
≤3.3A, di/dt≤140A/µs, VDD≤BV
SD
①
④
, Starting TJ =25oC
DSS
--
--
--
--
-123
--
0.38
--
6.1
1.5
--
--
A
V
ns
µC
0.77
--
Integral reverse pn-diode
in the MOSFET
T
=25oC,IS=0.77A,VGS=0V
J
T
=25oC,IF=3.3A
J
di
/dt=100A/µs
F
④
N-CHANNEL
POWER MOSFET
IRLM210A
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
GS
@ Notes :
1. 250 µs Pulse Test
, Drain Curren t [A]
I
10
10
D
10
1
0
-1
V
To p : 7 .0 V
6 . 0 V
5 . 5 V
5 . 0 V
4 . 5 V
4 . 0 V
3 . 5 V
Bo tt o m : 3 .0 V
2. TC = 25 oC
-1
10
0
10
1
10
VDS , Drain-Source Voltage [V]
4
]
Ω
, [
DS(on)
R
3
2
VGS = 5 V
1
Drain-Source On -Resistance
0
VGS = 10 V
0246810
ID , Drain Curren t [A]
@ Note : TJ = 25 oC
1
10
0
150 oC
10
25 oC
, Drain Curren t [A]
D
I
-1
10
0246810
- 55 oC
@ Notes :
1. V
2. V
3. 250
= 0 V
GS
= 40 V
DS
s Pulse Test
µ
VGS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
1
10
0
10
150 oC
, Reverse Drai n Current [A]
DR
I
-1
10
0.4 0.6 0.8 1.0 1.2 1.4
25 oC
@ Notes :
1. V
2. 250
GS
= 0 V
µ
s Pulse Test
VSD , Source-Drain Voltage [V]
300
240
C
iss
180
120
C
oss
Capacitance [pF]
C
60
rss
0
0
10
VDS , Drain-Source Voltage [V]
C
= Cgs+ Cgd ( Cds= shorted )
iss
C
= Cds+ C
oss
gd
C
= C
rss
gd
1
10
@ Notes :
= 0 V
1. V
GS
2. f = 1 MHz
6
VDS = 40 V
VDS =100 V
4
VDS = 160 V
2
, Gate-Source Voltage [V]
GS
V
0
0246
QG , Total Gate C harge [nC]
@ Notes : ID = 3.3 A
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
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