Fairchild Semiconductor IRLM120A Datasheet
Advanced Power MOSFET
IRLM120A
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 µA(Max.) @ V
n Lower R
: 0.176 Ω (Typ.)
DS(ON)
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
V
I
V
E
I
E
dv/dt
TJ, T
DSS
I
DM
AR
P
T
D
GS
AS
AR
D
STG
L
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
=25oC)
C
=70oC)
C
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC) *
Linear Derating Factor *
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
DS
= 100V
(1)
(2)
(1)
(1)
(3)
BV
DSS
R
DS(on)
ID= 2.3 A
SOT-223
1
1. Gate 2. Drain 3. Source
100
2.3
1.85
18
±20
105
2.3
0.27
6.5
2.7
0.022
- 55 to +150
300
= 100 V
= 0.22 Ω
2
3
V
A
A
V
mJ
A
mJ
V/ns
W
W/
o
C
o
C
Thermal Resistance
Characteristic Max. UnitsSymbol Typ.
R
θJA
*
When mounted on the mi nimum pad size recommended (PCB Mount).
Junction-to-Ambient *
o
46.3--
C/W
1
IRLM120A
N-CHANNEL
POWER MOSFET
Electrical Characteristics
CharacteristicSymbol
BV
∆BV/∆T
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
fs
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Turn-On Delay Time
t
Rise Time
r
Turn-Off Delay Time
t
Fall Time
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain (“Miller”) Charge
gd
(TC=25oC unless otherwise specified)
Max. UnitsTyp.Min. Test Condition
V
100
--
1.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.09
--
--
--
--
--
--
4.6
340
90
39
5
10
19
9
10.2
1.7
6.0
--
--
2.0
100
-100
10
100
0.22
-440
115
50
20
30
50
30
15
--
--
V
V/oC
V
nA
µA
Ω
pF
ns
nC
=0V,ID=250µA
GS
I
=250µA See Fig 7
D
V
=5V,ID=250µA
DS
V
=20V
GS
V
=-20V
GS
VDS=100V
V
=80V,TC=125oC
DS
=5V,ID=1.15A
V
GS
Ω
VDS=40V,ID=1.15A
VGS=0V,VDS=25V,f =1MHz
VDD=50V,ID=9.2A,
R
=9 Ω
G
VDS=80V,VGS=5V,
I
=9.2A
D
See Fig 6 & Fig 12
See Fig 5
See Fig 13
(4)
(4)
(4)(5)
(4)(5)
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes ;
① Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature
② L=30mH, I
③ I
④ Pulse Test : Pulse Width = 250µs, Duty Cyc l e <
⑤ Essentially Independent of Operating Temperature
Continuous Source Current
S
Pulsed-Source Current
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
=2.3A, VDD=25V, RG=27Ω, Starting TJ =25oC
AS
< 9.2A, di/dt < 300A/μs, V
SD
DD
< BV
, Starting TJ =25oC
DSS
(1)
(4)
2%
--
--
--
--
-98
--
0.34
--
18
1.5
--
--
A
V
ns
µC
2.3
--
Integral reverse pn-diode
in the MOSFET
T
=25oC,IS=2.3A,VGS=0V
J
T
=25oC,IF=9.2A
J
di
/dt=100A/µs
F
(4)
2
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
V
GS
Top : 7 .0 V
6 .0 V
5 .5 V
1
10
5 .0 V
4 .5 V
4 .0 V
3 .5 V
Bo tto m : 3 .0 V
0
10
, Drain Current [A ]
D
I
-1
10
-1
10
VDS , Drain-Source Voltage [V]
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
0
10
IRLM120A
1
10
150 oC
0
10
25 oC
, Drain Current [A]
D
I
-1
1
10
10
0246810
- 55 oC
VGS , Gate-Source Voltage [V]
@ Notes :
1. V
2. V
3. 250
= 0 V
GS
= 40 V
DS
s Pulse Test
µ
0.4
VGS = 5 V
VGS = 10 V
]
Ω
, [
DS(on)
R
0.3
0.2
0.1
Drain-Source On-Resistance
@ Note : TJ = 25 oC
0.0
0 10203040
600
C
480
360
C
240
Capacitance [pF]
C
ID , Drain Current [A ]
iss
oss
rss
C
= Cgs+ Cgd ( Cds= shorted )
iss
= Cds+ C
C
oss
gd
C
= C
rss
gd
@ Notes :
1. V
= 0 V
GS
2. f = 1 MHz
120
0
0
10
1
10
VDS , Drain-Source Voltage [V]
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
1
10
0
10
, Reverse Drain Curre nt [A]
150 oC
DR
I
-1
10
25 oC
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
@ Notes :
1. V
2. 250
GS
= 0 V
µ
s Pulse Test
VSD , Source-Drain Voltag e [V]
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
6
4
2
, Gate-Source Voltage [V]
GS
V
0
024681012
VDS = 20 V
VDS = 50 V
VDS = 80 V
@ Notes : ID = 9.2 A
QG , Total Gate Charge [nC]
3
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