Fairchild Semiconductor IRL620A Datasheet

$GYDQF HG 3RZH U 026)(7

IRL620A

FEATURES

Logic-Level Gate Drive

♦

Avalanche Rugged Technology

♦

Rugged Gate Oxide Technology

♦

Lower Input Capacitance

♦

Improved Gate Charge

♦

Extended Safe Operating Area

♦

Lower Leakage Current: 10µA (Max.) @ V

♦

Lower R

♦

: 0.609Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Volta ge
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Juncti on and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8

from case for 5-seconds

T

V

DSS

I

D

I

DM

V
E

I

AR

E

dv/dt

P

, T

J

T

GS
AS

AR

D

STG

L

= 200V

DS

=25°C)

C

=100°C)

C

(1)

(2)
(1)
(1)
(3)

BV
R

DSS

DS(on)

= 200 V

ID = 5 A

TO-220

1

2

3

1.Gate 2. Drain 3. Source

200

5

3.2
18

20

±

33

5

3.9

5

39

0.31

- 55 to +150

300

= 0.8Ω

V
A
A

V

mJ

A

mJ

V/ns

W

W/°C

°C

Thermal Resistance

R

JC

θ

R

θCS

R

θJA

©1999 Fairchild Semiconductor Corpor ation

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.5

--

3.17

--

62.5

°C/W

Rev. B

1

IRL620A

1&+$11(/

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Electrical Characteristics

CharacteristicSymbol

BV
∆BV/∆T
V

R

DSS

GS(th)

I

GSS

I

DSS

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

Q

gs

Q

gd

Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage
Gate-Source Leakage , Forwar d
Gate-Source Leakage , Revers e

Drain-to-Sou rce Leakage Current

Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge

g

Gate-Source Charge
Gate-Drain (

Miller ) Charge

(TC=25°C unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

200

--

1.0

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

0.18

--

--

--

--

--

--

3.3

330

55
25

8
6

24

6

10.3

2.0

4.4

--

--

2.0

100

-100
10

100

0.8

--

430

70
30
25
20
60
20
15

--

--

V

V/°C

V

nA

A

µ

Ω

pF

ns

nC

=0V,ID=250µA

GS

I

=250µA

D

VDS=5V,ID=250µA
V

=20V

GS

=-20V

V

GS

V

=200V

DS

V

=160V,TC=125°C

DS

=5V,ID=2.5A

V

GS

Ω

VDS=40V,ID=2.5A
V

=0V,VDS=25V,f =1MHz

GS

See Fig 5

VDD=100V,ID=5A,

=9

R

G

VDS=160V,VGS=5V,

=5A

I

D

See Fig 6 & Fig 12

See Fig 7

Ω

See Fig 13

(4)

(4)

(4) (5)

(4) (5)

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

I

SM

V

t

Q

Notes;

(1) Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
(2) L=2mH, I
(3) I
(4) Pulse Test : Pulse Width = 250µs, Duty Cycl e ≤ 2%

(5) Essentially Independent of Operating Temper ature

Continuous Source Current

S

Pulsed- S o u rce Curren t
Diode Forward Voltage

SD

Reverse Recove ry T ime

rr

Reverse Recovery Ch arge

rr

=5A, VDD=50V, RG=27Ω, Starting TJ =25°C

AS

5A, di/dt ≤ 180A/µs, V

≤

SD

DD

, Starting TJ =25°C

BV

≤

DSS

--

(1)

--

(4)

--

--

--

0.59

--

--

--

140

5

18

1.5

--

--

µ

A
V

ns

C

Integral reverse pn-diode
in the MOSFET
T

=25°C,IS=5A,VGS=0V

J

T

=25°C,IF=5A

J

di

/dt=100A/µs

F

(4)

2

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32:(5 026)(7

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

1

Top : 7 .0 V

10

6 .0 V
5 .5 V
5 .0 V
4 .5 V
4 .0 V
3 .5 V

0

10

Bot to m : 3 .0 V

, Drain Current [A]

D

I

-1

10

-1

10

VDS , Drain -Source Voltage [V]

@ Notes :

1. 250 µs Pulse Tes t

2. TC = 25 oC

0

10

IRL620A

1

10

150 oC

0

10

25 oC

, Drain Current [A]

D

I

-1

1

10

10

0246810

- 55 oC

VGS , Gate-Source Voltage [V]

@ Note s :

1. V

2. V

3. 2 50

= 0 V

GS

= 40 V

DS

s Puls e Test

µ

2.0

1.5

]

Ω

, [

DS(on)

R

1.0

0.5

Drain-So urce On-Resistance

VGS = 5 V

VGS = 10 V

@ Note : TJ = 25 oC

0.0
0 3 6 9 12 15 18

ID , Drain Current [A]

500

C

400

iss

300

C

200

oss

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

Capacita nce [pF]

C

100

rss

0

0

10

1

10

VDS , Drain -Source Voltage [V ]

@ Notes :

1. V

= 0 V

GS

2. f = 1 MHz

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Curr ent

1

10

0

10

, Reverse Drain Current [A]

150 oC

DR

I

-1

10

0.40.60.81.01.21.41.61.8

25 oC

@ Notes :

1. V

GS

2. 250

= 0 V

s Pulse Test

µ

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Sour ce Voltage

6

4

2

, Gate-Source Voltage [V]

GS

V

0

024681012

VDS = 40 V

VDS = 100 V

VDS = 160 V

@ Notes : ID = 5 A

QG , Total Gate Charge [nC]

3