Fairchild Semiconductor IRL610A Datasheet

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IRL610A

FEATURES

Avalanche Rugged Technology

♦

Rugged Gate Oxide Technology

♦

Lower Input Capacitance

♦

Improved Gate Charge

♦

Extended Safe Operating Area

♦

Lower Leakage Current: 10µA (Max.) @ V

♦

Lower R

♦

:1.185Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T Drain Current-Pulsed Gate-to-Source Volta ge Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Juncti on and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8

from case for 5-seconds

T

V

DSS

I

D

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

GS AS

AR

D

STG

L

= 200V

DS

=25°C)

C

=100°C)

C

(1)

(2) (1) (1) (3)

BV R

DSS

DS(on)

= 200 V

ID = 3.3 A

TO-220

1

2

3

1.Gate 2. Drain 3. Source

200

3.3

2.1 12

20

±

29

3.3

5.0 33

0.26

- 55 to +150

300

= 0.046Ω

V A A

V

mJ

A

mJ

V/ns

W

W/°C

°C

Thermal Resistance

R

JC

θ

R

θCS

R

θJA

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.5

--

3.81

--

62.5

°C/W

Rev. B

1

IRL610A

1&+$11(/

32:(5 026)(7

Electrical Characteristics

CharacteristicSymbol

BV

∆

V

DSS

BV/∆T

GS(th)

I

GSS

I

DSS

R

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forwar d Gate-Source Leakage , Revers e

Drain-to-Sou rce Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain (

Miller ) Charge

(TC=25°C unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

200

--

1.0

--

0.19

--

1.9

185

35 14

9 9

20

6

6.1

1.4

2.8

--

2.0

100

-100 10

100

1.5

--

240

45 20 30 30 50 20

9

--

V

V/°C

V

nA

A

µ

Ω

pF

ns

nC

=0V,ID=250µA

GS

I

=250µA

D

VDS=5V,ID=250µA

=20V

V

GS

=-20V

V

GS

V

=200V

DS

V

=160V,TC=125°C

DS

=5V,ID=1.65A

V

GS

Ω

VDS=40V,ID=1.65A V

=0V,VDS=25V,f =1MHz

GS

See Fig 5

VDD=100V,ID=3.3A,

=22

R

G

VDS=160V,VGS=5V, I

=3.3A

D

See Fig 6 & Fig 12

See Fig 7

Ω

See Fig 13

(4)

(4) (5)

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes;

(1) Repetitive Rating: Puls e Width Limited by Maximum Junction Te mperature (2) L=4mH, IAS=3.3A, VDD=50V, RG=27Ω, Starting TJ =25 °C (3) I (4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2% (5) Essentially Independent of Operating Temperature

Continuous Source Current

S

Pulsed- S o u rce Current Diode Forward Voltage

SD

Reverse Recove ry T ime

rr

Reverse Recovery Ch arge

rr

3.3A, di/dt ≤ 140A/µs, V

≤

SD

DD

, Starting TJ =25 °C

BV

≤

DSS

--

(1)

--

(4)

--

123

0.38

3.3 12

1.5

--

µ

A V

ns

C

Integral reverse pn-diode in the MOSFET T

=25°C,IS=3.3A,VGS=0V

J

T

=25°C,IF=3.3A

J

di

/dt=100A/µs

F

(4)

2

1&+$11(/

32:(5 026)(7

IRL610A

1

10

V Top : 7 .0 V

6 .0 V 5 .5 V 5 .0 V 4 .5 V 4 .0 V

0

10

3 .5 V Bo ttom : 3 . 0 V

, Drain Current [A]

D

-1

I

10

-1

10

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

GS

@ Note s :

1. 2 50 µs Puls e Test

2. TC = 25 oC

0

10

VDS , Drain-Source Voltage [V]

1

10

4

]

Ω

, [

DS(on)

R

3

2

VGS = 5 V

1

Drain-Source On-Resistance

0

VGS = 10 V

0246810

ID , Drain Current [A]

@ Note : TJ = 25 oC

1

10

0

150 oC

10

25 oC

, Drain Current [A]

D

I

-1

10

0246810

- 55 oC

@ Note s :

1. V

2. V

3. 2 50

= 0 V

GS

= 40 V

DS

s Puls e Test

µ

VGS , Gate-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistan ce vs. Drain Current

1

10

0

10

150 oC

, Reverse Drain Current [A]

DR

I

-1

10

0.40.60.81.01.21.4

25 oC

@ Notes :

1. V

GS

2. 250

= 0 V

s Pulse Test

µ

VSD , Source-Drain Voltage [V]

300

240

C

iss

180

120

C

oss

Capacitance [pF]

C

60

rss

0

10

VDS , Drain-Source Voltage [V]

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

1

10

@ Notes :

1. V

= 0 V

GS

2. f = 1 MHz

6

VDS = 40 V

VDS =100 V

4

VDS = 160 V

2

, Gate-Source Voltage [V]

GS

V

0

0246

QG , Total Gate Charge [nC]

@ Notes : ID = 3.3 A

3

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Vo ltage