Fairchild Semiconductor IRL520A Datasheet

$GYDQF HG 3RZH U 026)(7

IRL520A

FEATURES

Avalanche Rugged Technology

♦

Rugged Gate Oxide Technology

♦

Lower Input Capacitance

♦

Improved Gate Charge

♦

Extended Safe Operating Area

♦

Lower Leakage Current: 10µA (Max.) @ V

♦

Lower R

♦

: 0.176Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Volta ge
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Juncti on and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8

from case for 5-seconds

T

V

DSS

I

D

I

DM

V
E

I

AR

E

dv/dt

P

, T

J

T

GS
AS

AR

D

STG

L

= 100V

DS

=25°C)

C

=100°C)

C

(1)

(2)
(1)
(1)
(2)

BV
R

DSS

DS(on)

= 100 V

ID = 9.2 A

TO-220

1

2

3

1.Gate 2. Drain 3. Source

100

9.2

6.5
32

20

±

112

9.2

4.9

6.5
49

0.33

- 55 to +175

300

= 0.22Ω

V
A
A

V

mJ

A

mJ

V/ns

W

W/°C

°C

Thermal Resistance

R

θJC

R

CS

θ

R

θJA

©1999 Fairchild Semiconductor Corpor ation

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.5

--

3.04

--

62.5

°C/W

Rev. B

1

IRL520A

1&+$11(/

32:(5 026)(7

Electrical Characteristics

CharacteristicSymbol

BV
∆BV/∆T
V

R

DSS

GS(th)

I

GSS

I

DSS

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

Q

gs

Q

gd

Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage
Gate-Source Leakage , Forwar d
Gate-Source Leakage , Revers e

Drain-to-Sou rce Leakage Current

Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge

g

Gate-Source Charge
Gate-Drain (

Miller ) Charge

(TC=25°C unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

100

--

1.0

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

0.1

--

--

--

--

--

--

7.7

340

90
39

5
10
19

9

10.2

1.7

6.0

--

--

2.0

100

-100
10

100

0.22

-­440
115

50
20
30
50
30
15

--

--

V

V/°C

V

nA

A

µ

Ω

pF

ns

nC

=0V,ID=250µA

GS

I

=250µA

D

VDS=5V,ID=250µA

=20V

V

GS

V

=-20V

GS

V

=100V

DS

V

=80V,TC=150°C

DS

=5V,ID=4.6A

V

GS

Ω

VDS=40V,ID=4.6A
V

=0V,VDS=25V,f =1MHz

GS

See Fig 5

VDD=50V,ID=9.2A,
R

=9

G

VDS=80V,VGS=5V,

=9.2A

I

D

See Fig 6 & Fig 12

See Fig 7

Ω

See Fig 13

(4)

(4) (5)

(4) (5)

(4)

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

I

SM

V

t

Q

Notes;

(1) Repetitive Rating: Pu lse Width Limited by Maximum Junction Temperatu re
(2) L=2mH, I
(3) I
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%

(5) Essentially Independent of Operating Temper ature

Continuous Source Current

S

Pulsed- S o u rce Curren t
Diode Forward Voltage

SD

Reverse Recove ry T ime

rr

Reverse Recovery Ch arge

rr

=9.2A, VDD=25V, RG=27Ω, Starting TJ =25°C

AS

9.2A, di/dt ≤ 300A/µs, V

≤

SD

DD

≤

BV

DSS

--

(1)

--

(4)

--

--

--

, Starting TJ =25°C

--

--

--

98

0.34

9.2
32

1.5

--

--

µ

A
V

ns

C

Integral reverse pn-diode
in the MOSFET
T

=25°C,IS=9.2A,VGS=0V

J

T

=25°C,IF=9.2A

J

di

/dt=100A/µs

F

(4)

2

1&+$11(/

32:(5 026)(7

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 7.0 V
6 .0 V
5 .5 V

1

10

5 .0 V
4 .5 V
4 .0 V
3 .5 V
Bottom : 3.0 V

0

10

, Drain C urrent [A]

D

I

-1

10

-1

10

VDS , Drain-S ource Voltage [V]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

IRL520A

1

10

175 oC

0

10

25 oC

, Drain C urrent [A]

D

I

-1

1

10

10

0246810

- 55 oC

VGS , Gate-So urce Voltage [V]

@ Notes :

1. V

GS

2. V

DS

3. 250

= 0 V
= 40 V

s Pulse Test

µ

0.4

]

Ω

, [

DS(on)

R

0.3

0.2

0.1

Drain-Sour ce On-Resistance

VGS = 5 V

VGS = 10 V

@ Note : TJ = 25 oC

0.0
0 10203040

ID , Drain C urrent [A]

Capacitanc e [pF]

600

C

480

360

iss

C

oss

240

C

rss

120

0

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

1

10

@ Notes :

1. V

= 0 V

GS

2. f = 1 MHz

VDS , Drain-S ource Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Curre nt

1

10

0

10

, Reverse Drain Current [A]

175 oC

DR

I

10

25 oC

-1

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

@ Notes :

1. V

GS

2. 250

= 0 V

s Pulse Test

µ

VSD , Source- Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

6

4

2

, Gate-So urce Voltage [V]

GS

V

0

024681012

VDS = 20 V

VDS = 50 V

VDS = 80 V

@ Notes : ID = 9.2 A

QG , Total G ate Charge [nC]

3