Fairchild Semiconductor IRFW540A, IRFI540A Datasheet

Advanced Power MOSFET

IRFW/I540A

FEATURES

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175℃ Operating Temperature n Lower Leakage Current : 10 μA (Max.) @ V n Lower R

: 0.041 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

=25℃)

C

=100℃)

C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy ② Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25℃) Total Power Dissipation (T

=25℃)

C

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8? from case for 5-seconds

T

V

DSS

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

D

GS AS

AR

D

STG

L

DS

*

= 100V

①

③

BV

DSS

R

DS(on)

ID= 28 A

D2-PAK

1

3

1. Gate 2. Drain 3. Source

100

28

19.8 110

±20

523

28

10.7

6.5

3.8

107

0.71

- 55 to +175

300

= 100 V

= 0.052 Ω

I2-PAK

2

1

2

3

V A A

V

mJ

A

mJ

V/ns

W W

W/℃

℃

Thermal Resistance

Characteristic Max. UnitsSymbol Typ.

R

θJC

R

θJA

R

θJA

When mounted on the mi nimum pad size recommended (PCB Mount).

*

2001 Fairchild Semiconductor Corporation

Junction-to-Case Junction-to-Ambient Junction-to-Ambient

*

--

1.4 40

62.5

℃/W

Rev. B1

1

IRFW/I540A

N-CHANNEL

POWER MOSFET

Electrical Characteristics

CharacteristicSymbol

BV

ΔBV/ΔT

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g C

C

t

d(on)

t

d(off)

Q Q Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance

FS

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(밠iller? Charge

gd

(TC=25℃ unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

100

--

2.0

--

0.11

--

22.56 1320

325 148

18 18 90 56 60

10.8

27.9

--

4.0

100

-100 10

100

0.052

--

1710

380 170

50 50

180 120

78

--

V

V/℃

V

nA

μA

Ω

S

pF

ns

nC

=0V,ID=250μA

GS

I

=250μA See Fig 7

D

V

=5V,ID=250μA

DS

V

=20V

GS

V

=-20V

GS

VDS=100V V

=80V,TC=150℃

DS

VGS=10V,ID=14A

VDS=40V,ID=14A VGS=0V,VDS=25V,f =1MHz

VDD=50V,ID=28A, R

=9.1Ω

G

VDS=80V,VGS=10V, I

=28A

D

See Fig 6 & Fig 12

See Fig 5

See Fig 13

④

④⑤

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=1mH, I ③ I

④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% ⑤ Essentially Independent of Operating Temperature

Continuous Source Current

S

Pulsed-Source Current ① Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=28A, VDD=25V, RG=27Ω, Starting TJ =25℃

AS

≤28A, di/dt≤400A/μs, VDD≤BV

SD

④

, Starting TJ =25℃

DSS

--

-132

--

0.63

--

110

1.5

--

A

V

ns

μC

28

--

Integral reverse pn-diode in the MOSFET T

=25℃,IS=28A,VGS=0V

J

T

=25℃,IF=28A

J

di

/dt=100A/μs

F

④

2

N-CHANNEL

POWER MOSFET

IRFW/I540A

2

10

V

GS

Top : 1 5 V 1 0 V

8.0 V 7 .0 V

6.0 V 5 .5 V 5 .0 V Bo ttom : 4 .5 V

1

10

, Drain Current [A ]

D

I

0

10

-1

10

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

1

10

VDS , Drain-Source Voltage [V]

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

0.08

]

Ω

, [

DS(on)

R

0.06

0.04

VGS = 10 V

VGS = 20 V

0.02

Drain-Source On-Resistance

@ Note : TJ = 25 oC

0.00 0306090120

ID , Drain Current [A]

2

10

175 oC

1

10

25 oC

, Drain Current [A]

D

I

0

10

246810

- 55 oC

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= 40 V

DS

s Pulse Test

µ

VGS , Gate-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

2

10

1

10

175 oC

, Reverse Drain Current [A]

DR

I

0

10

25 oC

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

@ Notes :

1. V

2. 250

= 0 V

GS

s Pulse Test

µ

VSD , Source-Drain Voltage [V]

2500

2000

C

iss

1500

C

oss

1000

Capacitance [pF]

C

rss

500

0

10

VDS , Drain-Source Voltage [V]

C

= Cgs+ Cgd ( Cds= shorted )

iss

= Cds+ C

C

oss

gd

C

= C

rss

gd

1

10

@ Notes :

1. V

= 0 V

GS

2. f = 1 MHz

10

VDS = 20 V

VDS = 50 V

VDS = 80 V

5

, Gate-Source Voltage [V]

GS

V

0

0 10203040506070

@ Notes : ID =28.0 A

QG , Total Gate Charge [nC]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

3