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Advanced Power MOSFET
IRFW/I540A
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n 175℃ Operating Temperature
n Lower Leakage Current : 10 μA (Max.) @ V
n Lower R
: 0.041 Ω (Typ.)
DS(ON)
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
=25℃)
C
=100℃)
C
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy ②
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25℃)
Total Power Dissipation (T
=25℃)
C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds
T
V
DSS
I
I
DM
V
E
I
AR
E
dv/dt
P
, T
J
T
D
GS
AS
AR
D
STG
L
DS
*
= 100V
①
①
①
③
BV
DSS
R
DS(on)
ID= 28 A
D2-PAK
1
3
1. Gate 2. Drain 3. Source
100
28
19.8
110
±20
523
28
10.7
6.5
3.8
107
0.71
- 55 to +175
300
= 100 V
= 0.052 Ω
I2-PAK
2
1
2
3
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
Thermal Resistance
Characteristic Max. UnitsSymbol Typ.
R
θJC
R
θJA
R
θJA
When mounted on the mi nimum pad size recommended (PCB Mount).
*
2001 Fairchild Semiconductor Corporation
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
*
--
--
--
1.4
40
62.5
℃/W
Rev. B1
1
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IRFW/I540A
N-CHANNEL
POWER MOSFET
Electrical Characteristics
CharacteristicSymbol
BV
ΔBV/ΔT
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
FS
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Turn-On Delay Time
t
Rise Time
r
Turn-Off Delay Time
t
Fall Time
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain(밠iller? Charge
gd
(TC=25℃ unless otherwise specified)
Max. UnitsTyp.Min. Test Condition
V
100
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.11
--
--
--
--
--
--
22.56
1320
325
148
18
18
90
56
60
10.8
27.9
--
--
4.0
100
-100
10
100
0.052
--
1710
380
170
50
50
180
120
78
--
--
V
V/℃
V
nA
μA
Ω
S
pF
ns
nC
=0V,ID=250μA
GS
I
=250μA See Fig 7
D
V
=5V,ID=250μA
DS
V
=20V
GS
V
=-20V
GS
VDS=100V
V
=80V,TC=150℃
DS
VGS=10V,ID=14A
VDS=40V,ID=14A
VGS=0V,VDS=25V,f =1MHz
VDD=50V,ID=28A,
R
=9.1Ω
G
VDS=80V,VGS=10V,
I
=28A
D
See Fig 6 & Fig 12
See Fig 5
See Fig 13
④
④
④⑤
④⑤
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=1mH, I
③ I
④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%
⑤ Essentially Independent of Operating Temperature
Continuous Source Current
S
Pulsed-Source Current ①
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
=28A, VDD=25V, RG=27Ω, Starting TJ =25℃
AS
≤28A, di/dt≤400A/μs, VDD≤BV
SD
④
, Starting TJ =25℃
DSS
--
--
--
--
-132
--
0.63
--
110
1.5
--
--
A
V
ns
μC
28
--
Integral reverse pn-diode
in the MOSFET
T
=25℃,IS=28A,VGS=0V
J
T
=25℃,IF=28A
J
di
/dt=100A/μs
F
④
2
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N-CHANNEL
POWER MOSFET
IRFW/I540A
2
10
V
GS
Top : 1 5 V
1 0 V
8.0 V
7 .0 V
6.0 V
5 .5 V
5 .0 V
Bo ttom : 4 .5 V
1
10
, Drain Current [A ]
D
I
0
10
-1
10
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
0
10
1
10
VDS , Drain-Source Voltage [V]
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
0.08
]
Ω
, [
DS(on)
R
0.06
0.04
VGS = 10 V
VGS = 20 V
0.02
Drain-Source On-Resistance
@ Note : TJ = 25 oC
0.00
0306090120
ID , Drain Current [A]
2
10
175 oC
1
10
25 oC
, Drain Current [A]
D
I
0
10
246810
- 55 oC
@ Notes :
1. V
2. V
3. 250
= 0 V
GS
= 40 V
DS
s Pulse Test
µ
VGS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
2
10
1
10
175 oC
, Reverse Drain Current [A]
DR
I
0
10
25 oC
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
@ Notes :
1. V
2. 250
= 0 V
GS
s Pulse Test
µ
VSD , Source-Drain Voltage [V]
2500
2000
C
iss
1500
C
oss
1000
Capacitance [pF]
C
rss
500
0
0
10
VDS , Drain-Source Voltage [V]
C
= Cgs+ Cgd ( Cds= shorted )
iss
= Cds+ C
C
oss
gd
C
= C
rss
gd
1
10
@ Notes :
1. V
= 0 V
GS
2. f = 1 MHz
10
VDS = 20 V
VDS = 50 V
VDS = 80 V
5
, Gate-Source Voltage [V]
GS
V
0
0 10203040506070
@ Notes : ID =28.0 A
QG , Total Gate Charge [nC]
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
3