Fairchild Semiconductor IRFW530A, IRFI530A Datasheet

Advanced Power MOSFET

IRFW/I530A

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area

Ο

175 Operating Temperature

C

Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower R

: 0.092 (Typ.)

DS(ON)

Ω

µ

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

T

V

DSS

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

D

GS

AS

AR

D

STG

L

Drain-to-Source Voltage

Ο

Continuous Drain Current (T Continuous Drain Current (T

=25 )

C

=100 )

C

Ο

C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt

Ο

Total Power Dissipation (T Total Power Dissipation (T

=25 )

A

=25 )

C

*

C

Ο

C

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

O O

O O O

BV R I

1

100

14

9.9

1

2

1 1

3

+

_

56

20

261

14

5.5

6.5

3.8 55

0.36

= 100 V

DSS

I2-PAK

1

2

3

Ω

= 0.11

DS(on)

= 14 A

D

D2-PAK

2

3

1. Gate 2. Drain 3. Source

V A A

V

mJ

A

mJ

V/ns

W W

W/

Ο

C

- 55 to +175

Ο

C

300

Thermal Resistance

Characteristic Max. UnitsSymbol Typ.

R

θ

JC

R

θ

JA

R

JA

θ

*

When mounted on the minimum pad size recommended (PCB Mount).

Junction-to-Case Junction-to-Ambient Junction-to-Ambient

*

--

2.74 40

62.5

Ο

/W

C

Rev. B

IRFW/I530A

Electrical Characteristics (T

Ο

=25 unless otherwise specified)

C

N-CHANNEL

POWER MOSFET

BV

∆ ∆

BV/ T

V

GS(th)

I

R

DS(on)

C

t

d(on)

t

d(off)

Q Q

DSS

GSS

DSS

g

iss

oss

rss

t

Q

CharacteristicSymbol

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance

fs

Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time

r

Turn-Off Delay Time Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(“Miller”) Charge

gd

100

--

2.0

--

Max. UnitsTyp.Min. Test Condition

=0V,ID=250 A

V

--

4.0

100

10

100

-790 175

72 40 40

110

80 36

--

V

GS

Ο

I

V/

µ

=250 A See Fig 7

C

D

V

nA

A

Ω

pF

ns

=5V,ID=250 A

DS

V

=20V

GS

V

=-20V

GS

V

=100V

DS

V

=80V,TC=150

DS

=10V,ID=7A

V

GS

=40V,ID=7A

V

DS

=0V,VDS=25V,f =1MHz

V

GS

See Fig 5

V

=50V,ID=14A,

DD

=12

R

G

See Fig 13

V

=80V,VGS=10V,

DS

nC

I

=14A

D

See Fig 6 & Fig 12

--

0.11

--

10.25 610 150

62 13 14 55 36 27

4.5

12.8

-100

0.11

µ

Ο

C

4

O

4

O

Ω

4

5

O

4

5

O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

2

L=2mH, I

O

3

I

O

SD

Pulse Test : Pulse Width = 250 s, Duty Cycle 2%

4

O

Essentially Independent of Operating Temperature

5

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=14A, VDD=25V, RG=27 , Starting TJ =25

AS

_

µ

14A, di/dt 350A/ s, VDD BV

_

<

_

<

Ω

DSS

µ

1

O

4

O

, Starting TJ =25

_

<

--

14

--

56

--

1.5

--

109

--

0.41

o

C

o

C

--

Integral reverse pn-diode

A

in the MOSFET

Ο

C

T

=25 ,IS=14A,VGS=0V

J

Ο

C

T

=25 ,IF=14A

J

/dt=100A/ s

di

F

ns

µ

V

C

µ

O

4

N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 1 5 V 1 0 V

8.0 V

7.0 V

6.0 V

5.5 V

1

10

5.0 V Bottom : 4.5 V

, Drain Current [A]

D

I

0

10

-1

10

VDS , Drain-Source Voltage [V]

0

@ Notes :

1. 250

2. T

s Pulse Test

µ

= 25 oC

C

IRFW/I530A

1

10

o

175

C

0

10

25 oC

, Drain Current [A]

D

I

-1

1

10

2 4 6 8 10

- 55

o

C

VGS , Gate-Source Voltage [V]

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= 40 V

DS

s Pulse Test

µ

0.20

VGS = 10 V

]

Ω

, [

DS(on)

R

0.15

0.10

0.05

Drain-Source On-Resistance

0.00 0 15 30 45 60

ID , Drain Current [A]

1000

C

iss

750

C

500

Capacitance [pF]

250

oss

C

rss

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

VGS = 20 V

@ Note : TJ = 25 oC

@ Notes :

= 0 V

1. V

GS

2. f = 1 MHz

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

, Reverse Drain Current [A]

175 oC

DR

I

-1

10

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

o

25

C

@ Notes :

1. VGS = 0 V

2. 250

s Pulse Test

µ

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

V

= 20 V

10

5

VDS = 50 V

V

= 80 V

DS

, Gate-Source Voltage [V]

GS

0

10

1

10

VDS , Drain-Source Voltage [V]

V

0

0 5 10 15 20 25 30

QG , Total Gate Charge [nC]

@ Notes : ID = 14.0 A

Fairchild Semiconductor IRFW530A, IRFI530A Datasheet

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