Fairchild Semiconductor IRFW520A, IRFI520A Datasheet

Advanced Power MOSFET

IRFW/I520A

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area

Ο

C

175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower R

: 0.155 (Typ.)

DS(ON)

Ω

µ

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

T

V

DSS

I

D

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

GS

AS

AR

D

STG

L

Drain-to-Source Voltage

Ο

Continuous Drain Current (T Continuous Drain Current (T

=25 )

C

=100 )

C

Ο

C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt

Ο

Total Power Dissipation (T Total Power Dissipation (T

=25 )

A

=25 )

C

*

C

Ο

C

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

O O

O O O

BV R I

1

100

9.2

6.5

1

2

1 1

3

+

_

37

20

113

9.2

4.5

6.5

3.8 45

0.3

= 100 V

DSS

2

1

I2-PAK

2

3

Ω

= 0.2

DS(on)

= 9.2 A

D

D2-PAK

3

1. Gate 2. Drain 3. Source

V A A

V

mJ

A

mJ

V/ns

W W

W/

Ο

C

- 55 to +175

Ο

C

300

Thermal Resistance

Characteristic Max. UnitsSymbol Typ.

R

θ

JC

R

JA

θ

R

θ

JA

*

When mounted on the minimum pad size recommended (PCB Mount).

Junction-to-Case Junction-to-Ambient Junction-to-Ambient

*

--

3.31 40

62.5

Ο

/W

C

Rev. B

IRFW/I520A

Electrical Characteristics (T

Ο

=25 unless otherwise specified)

C

=25

C

N-CHANNEL

POWER MOSFET

BV

∆ ∆

BV/ T

V

GS(th)

I

R

DS(on)

C

t

d(on)

t

d(off)

Q Q

DSS

GSS

DSS

g

iss

oss

rss

t

Q

CharacteristicSymbol

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance

fs

Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time

r

Turn-Off Delay Time Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(“Miller”) Charge

gd

100

--

2.0

--

Max. UnitsTyp.Min. Test Condition

=0V,ID=250 A

V

--

4.0

100

10

100

0.2

-480 110

45 40 40 90 70 22

--

V

GS

Ο

I

V/

nA

µ

A

nC

=250 A See Fig 7

C

D

V

Ω

pF

ns

=5V,ID=250 A

DS

V

=20V

GS

V

=-20V

GS

V

=100V

DS

V

=80V,TC=150

DS

=10V,ID=4.6A

V

GS

=40V,ID=4.6A

V

DS

=0V,VDS=25V,f =1MHz

V

GS

See Fig 5

V

=50V,ID=9.2A,

DD

=18

R

G

V

=80V,VGS=10V,

DS

I

=9.2A

D

See Fig 6 & Fig 12

µ

Ω

See Fig 13

--

0.12

--

6.35 370

95 38 14 14 36 28 16

2.7

7.8

-100

µ

Ο

C

4

O

4

O

4

5

O

4

5

O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

2

L=2mH, I

O

3

I

O

SD

Pulse Test : Pulse Width = 250 s, Duty Cycle 2%

4

O

Essentially Independent of Operating Temperature

5

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=9.2A, VDD=25V, RG=27 , Starting TJ =25

AS

_

µ

9.2A, di/dt 300A/ s, VDD BV

_

<

_

<

µ

Ω

, Starting TJ =25

DSS

O O

_

<

--

9.2

1

--

37

4

--

1.5

--

98

--

0.34

o

C

o

C

--

Integral reverse pn-diode

A

in the MOSFET

V

ns

µ

C

Ο

C

T

=25 ,IS=9.2A,VGS=0V

J

Ο

C

T

=25 ,IF=9.2A

J

/dt=100A/ s

di

F

µ

O

4

N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 1 5 V 1 0 V

8.0 V

1

7.0 V

10

6.0 V

5.5 V

5.0 V Bottom : 4.5 V

0

10

, Drain Current [A]

D

I

-1

10

VDS , Drain-Source Voltage [V]

0

@ Notes :

1. 250

2. T

C

s Pulse Test

µ

= 25 oC

IRFW/I520A

1

10

o

175

C

0

10

, Drain Current [A]

D

I

1

10

25 oC

o

- 55

C

-1

10

2 4 6 8 10

VGS , Gate-Source Voltage [V]

@ Notes :

1. V

GS

2. V

DS

3. 250

= 0 V = 40 V

s Pulse Test

µ

0.4

]

Ω

, [

DS(on)

R

0.3

0.2

0.1

VGS = 10 V

VGS = 20 V

Drain-Source On-Resistance

@ Note : TJ = 25 oC

0.0 0 10 20 30 40

ID , Drain Current [A]

600

C

iss

400

C

oss

200

Capacitance [pF]

C

rss

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

@ Notes :

= 0 V

1. V

GS

2. f = 1 MHz

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

, Reverse Drain Current [A]

175 oC

DR

I

-1

10

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

o

25

C

@ Notes :

1. VGS = 0 V

2. 250

s Pulse Test

µ

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

V

= 20 V

10

5

DS

VDS = 50 V

VDS = 80 V

, Gate-Source Voltage [V]

GS

0

10

1

10

VDS , Drain-Source Voltage [V]

V

0

0 5 10 15 20

QG , Total Gate Charge [nC]

@ Notes : ID = 9.2 A

Fairchild Semiconductor IRFW520A, IRFI520A Datasheet

Specifications and Main Features

Frequently Asked Questions

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